Features
- Input Unmatched
- 180 W (CW) Minimum Pout
- 250 W Typical Pout
- 24 dB Typical Small Signal Gain
- 28 V and 50 V Operation
CGHV40180
180-W; DC - 2 GHz; GaN HEMT
Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.
Products
CGHV40180
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CGHV40180
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV40180P | Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV40180F-AMP3 | Yes | GaN on SiC | 0.96 GHz | 1.25 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Evaluation Board | Flange | ||||
CGHV40180F | Yes | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28 V / 50 V | Packaged Discrete Transistor | Flange |
Applications
- Military Communications
- Public Safety VHF-UHF applications
- Radar
- Medical
- Broadband Amplifiers
Documents, Tools & Support
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Documents
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center
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