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CGHV59070

Wolfspeed CGHV59070 composite flange and pill package
70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems
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Wolfspeed’s CGHV59070 is an internally matched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070; operating from a 50 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

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CGHV59070

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CGHV59070

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV59070P
Yes
GaN on SiC
4.5 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Packaged Discrete Transistor
Pill
CGHV59070F-AMP
Yes
GaN on SiC
4.8 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Evaluation Board
Flange
CGHV59070F
Yes
GaN on SiC
4.5 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Packaged Discrete Transistor
Flange
Features
  • 4.4 – 5.9 GHz Operation
  • 90 W POUT typical at 50 V
  • 14 dB Power Gain
  • 55 % Drain Efficiency
  • Internally Matched
Applications
  • Marine Radar
  • Weather Monitoring
  • Air Traffic Control
  • Maritime Vessel Traffic Control
  • Port Security
  • Troposcatter Communications
  • Beyond Line of Sight – BLOS
  • Satellite Communications

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by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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