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CGHV59350

350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT
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Wolfspeed CGHV59350 is a GaN HEMT designed with high-efficiency; high-gain; and wide-bandwidth. It’s ideal for 5.2-5.9 GHz c-band radar-amplifier applications.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV59350P
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Pill
CGHV59350F-AMP
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Evaluation Board
Flange
CGHV59350F
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Flange
Features
  • 5.2 – 5.9 GHz Operation
  • 470 W Typical Output Power
  • 10.7 dB Power Gain
  • 60% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • C-Band Radar amplifiers
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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