Features
- 5.2 – 5.9 GHz Operation
- 470 W Typical Output Power
- 10.7 dB Power Gain
- 60% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop
CGHV59350
350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT
Wolfspeed CGHV59350 is a GaN HEMT designed with high-efficiency; high-gain; and wide-bandwidth. It's ideal for 5.2-5.9 GHz c-band radar-amplifier applications.
Products
CGHV59350
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CGHV59350
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV59350P | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 350 W | 11 dB | 55% | 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV59350F-AMP2 | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 350 W | 11 dB | 55% | 50 V | Evaluation Board | Flange | ||||
CGHV59350F | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 350 W | 11 dB | 55% | 50 V | Packaged Discrete Transistor | Flange |
Applications
- C-Band Radar amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Design Files | |
| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
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