Features
- 8.4 – 9.6 GHz Operation
- 80 W POUT typical
- 10 dB Power Gain
- 55 % Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
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CGHV96050F2-AMP | Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Evaluation Board | Flange | ||
CGHV96050F2 | Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Packaged Discrete Transistor | Flange |
Document Type | Document Name |
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Design Files | |
Data Sheets | |
S-parameters | |
Technical Papers & Articles | by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Product Catalog | |
Sales Terms |