Features
- 8.4 – 9.6 GHz Operation
- 80 W POUT typical
- 10 dB Power Gain
- 55 % Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
CGHV96050F2
50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT
Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Products
CGHV96050F2
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CGHV96050F2
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV96050F2-AMP | Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Evaluation Board | Flange | |||
CGHV96050F2 | Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Packaged Discrete Transistor | Flange |
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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Document Type | Document Name |
|---|---|
| Design Files | |
| Data Sheets | |
| Technical Papers & Articles | by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
Knowledge Center
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