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CGHV96050F2

CGHV96050F2

50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT
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NOTE: Not recommended for new designs.

Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV96050F2-AMP
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
NA
40 V
Evaluation Board
Flange
CGHV96050F2
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Features
  • 8.4 – 9.6 GHz Operation
  • 80 W POUT typical
  • 10 dB Power Gain
  • 55 % Typical PAE
  • 50 Ohm Internally Matched
  • <0.1 dB Power Droop
Applications
  • Marine Radar
  • Weather Monitoring
  • Air Traffic Control
  • Maritime Vessel Traffic Control
  • Port Security
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Technical Papers & Articles
by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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