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CMPA1D1E025

CMPA1D1E025

25-W; 13.75 to 14.5-GHz; 40-V; Ku-Band GaN MMIC Power Amplifier

Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead; 25-mm x 9.9-mm; metal/ceramic flanged package for optimal electrical and thermal performance.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E025F
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
CMPA1D1E025F-AMP
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Features
  • 24 dB Small Signal Gain
  • 40 W Typical Pulsed PSAT
  • Operation up to 40 V
  • 20 W linear power under OQPSK
  • Class A/B high gain; high efficiency 50 ohm MMIC Ku Band high power amplifier
Applications
  • Satellite Communications Uplink
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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