Contact
中文
Home
CMPA2735015

CMPA2735015

cmpa2735015
15 W; 2.7 to 3.5 GHz; 50 V; GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA2735015D
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
32 dB
45%
50 V
MMIC Bare Die
CMPA2735015S
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
33 dB
50%
50 V
Packaged MMIC
Plastic
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA2735015D
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
32 dB
45%
50 V
MMIC Bare Die
CMPA2735015S
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
33 dB
50%
50 V
Packaged MMIC
Plastic
Features
  • 35 dB Small Signal Gain
  • 20 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Civil and Military Pulsed Radar Amplifiers
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
xband-hero-image
GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
Continue Reading 
 Technical Articles
rf_virtual_tradeshow
Communication Infrastructure

Wolfspeed RF on the Web: A Virtual Trade Show Experience

We’ve missed seeing you at our industry trade shows this year. Check out our virtual booth to get an in-depth look at some of Wolfspeed’s most popular rf products
Continue Reading 
 Technical Articles
image_top-design-considerations-for-x-band-gan-power-amplifiers
GaN on SiC

Top Design Considerations for X-Band GaN Power Amplifiers

In this webinar, Dr. Robert Smith of PRFI Ltd. will discuss PA design considerations such as MMIC process selection, transistor sizing and biasing. He will also talk about the power combining of multiple transistors, matching considerations, and load-pull simulations.
Register Now 
 Webinars
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed