Contact
中文
Home
CMPA2735015

CMPA2735015

cmpa2735015
15 W; 2.7 to 3.5 GHz; 50 V; GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA2735015D
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
32 dB
45%
50 V
MMIC Bare Die
CMPA2735015S
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
33 dB
50%
50 V
Packaged MMIC
Plastic
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA2735015D
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
32 dB
45%
50 V
MMIC Bare Die
CMPA2735015S
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
33 dB
50%
50 V
Packaged MMIC
Plastic
Features
  • 35 dB Small Signal Gain
  • 20 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Civil and Military Pulsed Radar Amplifiers
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Primit Parikh – Yifeng Wu – M. Moore – P. Chavarkar – U. Mishra – R. Neidhard – L. Kehias – T. Jenkins – AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power – high frequency applications but recently have also garnered interest for low noise receiver applications.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Primit Parikh – Yifeng Wu – M. Moore – P. Chavarkar – U. Mishra – R. Neidhard – L. Kehias – T. Jenkins – AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power – high frequency applications but recently have also garnered interest for low noise receiver applications.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
highpower_wideband_lband_image
GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
Jamming man-portable pack2
GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
 Blog
RF PA 101_amplifier classes image
GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed