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CMPA3135060S

CMPA3135060S

cmpa3135060s
3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier

Wolfspeed’s CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach; enabling high power and power added efficiency to be achieved in a 7mm x 7mm; surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA3135060S
New
Yes
GaN on SiC
3.1 GHz
3.5 GHz
75 W
20 dB
55%
50 V
Packaged MMIC
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA3135060S
New
Yes
GaN on SiC
3.1 GHz
3.5 GHz
75 W
20 dB
55%
50 V
Packaged MMIC
Features
  • 3.1 – 3.5 GHz Operation
  • 75 W Typical Output Power
  • 29 dB Power Gain
  • 50-ohm Matched for Ease of Use
  • Plastic Surface-Mount Package; 7×7 mm QFN
Applications
  • Air Traffic Control Radar
  • Defense Surveillance Radar
  • Fire Control Radar
  • Military Air; Land and Sea Radar
  • Weather Radar
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Simon M. Wood – Ulf Andre – Bradley J. Millon – and Jim Milligan – This paper presents the design – development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Design Files
S-parameters
S-parameters
S-parameters
S-parameters
S-parameters
S-parameters
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Simon M. Wood – Ulf Andre – Bradley J. Millon – and Jim Milligan – This paper presents the design – development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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