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CMPA5259050

50-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers

Wolfspeed’s CMPA5259050 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259050 ideal for 5.2 – 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA5259050F-AMP1
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
Packaged MMIC
Flange
CMPA5259050D
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
MMIC Bare Die
Die
CMPA5259050F
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
Packaged MMIC
Flange
CMPA5259050F-AMP
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
Evaluation Board
Flange
CMPA5259050S
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
50%
28 V
Packaged MMIC
Surface Mount
Features
  • 31 dB Small Signal Gain
  • 50 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • AESA Radar
  • Defense Radar
  • Fire Control Radar
  • Naval; Marine; Ground Protection Radar
  • Weather Radar
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center

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RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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 Technical Articles

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