Features
- 30 dB Small Signal Gain
- Up to 50 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA5585030D | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 30 dB | 44% | 28 V | MMIC Bare Die | Die | ||||
CMPA5585030F-AMP | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA5585030F | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange |
Document Type | Document Name |
---|---|
Application Notes | |
Application Notes | |
Application Notes | |
Design Files | |
Data Sheets | |
Data Sheets | |
Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
|
Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
|
Product Catalog | |
Sales Terms |