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CMPA601C025

CMPA601C025

Wolfspeed CMPA601C025F GaN MMIC Power Amplifier
25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier

Wolfspeed’s CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN on Si; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si; GaAs; and GaN on Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA601C025D
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
CMPA601C025F
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
CMPA601C025F-AMP
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA601C025D
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
CMPA601C025F
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
CMPA601C025F-AMP
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Features
  • 34 dB Small Signal Gain
  • 40 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
Applications
  • Jamming Amplifiers
  • Test Equipment Amplifiers
  • Broadband Amplifiers
  • Radar Amplifiers
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Document Type
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Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: a
Data Sheets
Version: 2.1
Data Sheets
Version: 4.1
Design Files
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: 1.0
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: RS4067052019
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: a
Data Sheets
Version: 2.1
Data Sheets
Version: 4.1
Design Files
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: 1.0
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: RS4067052019
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
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