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CMPA801B025

CMPA801B025

cmpa801b025_1
25 W; 8.0 – 11.0 GHz; GaN MMIC Power Amplifier

Note: CMPA801B025 is Discontinued. Refer to CMPA801B030F1/S

Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. It is available in a die; 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA801B025P
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
CMPA801B025F-AMP
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
CMPA801B025D
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
CMPA801B025F
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA801B025P
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
CMPA801B025F-AMP
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
CMPA801B025D
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
CMPA801B025F
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
Features
  • 28 dB Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Point to Point Radio
  • Communications
  • Test Instrumentation
  • EMC Amplifiers
Apply Filters
Document Type
Document Name
Version
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: a
Data Sheets
Version: 4.1
Data Sheets
Version: 2.2
Design Files
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: 1.0
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: RS4067052019
Product Ecology
CMPA801B025P
Version: 1.0
Product Ecology
CMPA801B025P
Version: RS4132052019
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: a
Data Sheets
Version: 4.1
Data Sheets
Version: 2.2
Design Files
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: 1.0
Product Ecology
CMPA1D1E025F – CMPA5585025F – CMPA5585030F – CMPA601C025F – CMPA801B025F
Version: RS4067052019
Product Ecology
CMPA801B025P
Version: 1.0
Product Ecology
CMPA801B025P
Version: RS4132052019
Product Ecology
CMPA0060002D – CMPA0060025D – CMPA0527005D – CMPA1C1D060D – CMPA1D1E030D – CMPA1D1E050D – CMPA2060025D – CMPA2560025D – CMPA2735015D – CMPA2735075D – CMPA5080025D – CMPA5259030D – CMPA5259050D – CMPA5585025D – CMPA5585030D – CMPA601C025D – CMPA801B025D – CMPA901A040D
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
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