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CMPA801B025

CMPA801B025

cmpa801b025_1
25 W; 8.0 – 11.0 GHz; GaN MMIC Power Amplifier

Note: CMPA801B025 is Discontinued. Refer to CMPA801B030F1/S

Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. It is available in a die; 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.

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Data Sheet
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA801B025P
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
CMPA801B025F-AMP
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
CMPA801B025D
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
CMPA801B025F
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
Product SKU
Buy Online
Data Sheet
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA801B025P
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
CMPA801B025F-AMP
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
CMPA801B025D
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
CMPA801B025F
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
Features
  • 28 dB Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Point to Point Radio
  • Communications
  • Test Instrumentation
  • EMC Amplifiers
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Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Design Files
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Design Files
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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