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CMPA901A035

Wolfspeed CMPA901A035 RF flange and f1 packages
35-W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers
The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device can also be  operated under pulse conditions.  

Products

CMPA901A035

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CMPA901A035

Product SKU
Buy Online
Data Sheet
CAD Model
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA901A035F-AMP
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Evaluation Board
Flange
CMPA901A035F
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
CMPA901A035F1
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Features
  • Typical Output Power 40 W
  • Typical Power Gain 23 dB
  • Typical PAE 35%
  • Operation up to 28 V
Applications
  • Military Radar
  • Marine Radar
  • Weather Radar
  • Medical Applications

Documents, Tools & Support

Documents

Document Type
Document Name
Design Files
Data Sheets
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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