Features
- Typical Output Power 40 W
- Typical Power Gain 23 dB
- Typical PAE 35%
- Operation up to 28 V
CMPA901A035
35-W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers
The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device can also be operated under pulse conditions.
Products
CMPA901A035
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CMPA901A035
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA901A035F-AMP | Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 35% | 28 V | Evaluation Board | Flange | ||||
CMPA901A035F | Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 35% | 28 V | Packaged MMIC | Flange | ||||
CMPA901A035F1 | Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 38% | 28 V | Packaged MMIC | Flange |
Applications
- Military Radar
- Marine Radar
- Weather Radar
- Medical Applications
Documents, Tools & Support
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Documents
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Document Type | Document Name |
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| Design Files | |
| Data Sheets | |
| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center
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