所有航空航天与国防

所有航空航天与国防

数十年来，Wolfspeed 一直推动射频技术的进步发展，并成为商用和军用航空、空中交通管制、天气服务、飞行器到卫星的通信、太空探索等领域无线通信和雷达系统的核心技术。Wolfspeed的创新，包括了突破性碳化硅基氮化镓研发、完全整合的设计支持、以及定制组装等。所有这些创新都助力 Wolfspeed 不断地为客户提供在尺寸、重量和功率方面具有显著优势的解决方案。我们可作为完整的射频系统设计合作伙伴，为您提供碳化硅基氮化镓（已封装和裸芯片）和 LDMOS 器件丰富产品组合。

SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA0530002S-AMP1	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CMPA0530002S	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CMPA0527005F	Yes	GaN on SiC	0.5 GHz	2.4 GHz	5 W	20 dB	47%	50 V	Packaged MMIC	Flange
CGH60008D-GP4	Yes	GaN on SiC	DC	6 GHz	8 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CMPA0560008S New	Yes	GaN on SiC	0.45 GHz	6 GHz	10 W	19 dB	40%	28 V	Packaged MMIC	Surface Mount
CMPA2735015S	Yes	GaN on SiC	2.7 GHz	3.5 GHz	15 W	33 dB	50%	50 V	Packaged MMIC	Plastic
CMPA801B025F	No	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	36%	28 V	Packaged MMIC	Flange
CMPA801B025D	No	GaN on SiC	8 GHz	11 GHz	25 W	28 dB	45%	28 V	MMIC Bare Die	Die
CMPA0060025F1-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F1	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CMPA2735030S	Yes	GaN on SiC	2.7 GHz	3.5 GHz	30 W	32 dB	45%	50 V	Discrete Bare Die	Surface Mount
CMPA801B030F	No	GaN on SiC	8 GHz	11 GHz	30 W	16 dB	36%	28 V	Packaged MMIC	Flange
CMPA5585030F-AMP	Yes	GaN on SiC	5.5 GHz	8.5 GHz	30 W	25 dB	30%	28 V	Evaluation Board	Flange
CMPA5585030F	Yes	GaN on SiC	5.5 GHz	8.5 GHz	30 W	25 dB	30%	28 V	Packaged MMIC	Flange
CGHV27030S-AMP5	Yes	GaN on SiC	1.2 GHz	1.4 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S-AMP1	Yes	GaN on SiC	2.5 GHz	2.7 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CMPA901A020S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	30 dB	45%	28 V	Packaged MMIC	Plastic
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange
CMPA9396025S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	45%	40 V	Evaluation Board	Plastic
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA801B030F1	Yes	GaN on SiC	8 GHz	12 GHz	35 W	19 dB	36%	28 V	Packaged MMIC	Flange
CMPA901A035F1	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	38%	28 V	Packaged MMIC	Flange
CMPA5259025S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	40 W	25 dB	54%	28 V	Packaged MMIC	Plastic
CMPA801B030D1	Yes	GaN on SiC	8 GHz	11 GHz	40 W	28 dB	42%	28 V	MMIC Bare Die	Die
CMPA901A035F-AMP	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Evaluation Board	Flange
CMPA901A035F	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Packaged MMIC	Flange
CMPA5259050F-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CMPA5259050D	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	MMIC Bare Die	Die
CGHV96050F2-AMP	Yes	GaN on SiC	8.4 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Evaluation Board	Flange
CGHV96050F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Packaged Discrete Transistor	Flange
CGHV40050F-AMP	Yes	GaN on SiC	0.8 GHz	2 GHz	50 W	16 dB	53%	50 V	Evaluation Board	Flange
CGHV59070F-AMP	Yes	GaN on SiC	4.8 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Evaluation Board	Flange
CGHV59070F	Yes	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Packaged Discrete Transistor	Flange
CMPA5259080S-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	80 W	22 dB	44%	40 V	Packaged MMIC	Surface Mount
CMPA2738060F-AMP	Yes	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	54%	50 V	Evaluation Board	Flange
CMPA2738060F	Yes	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	54%	50 V	Packaged MMIC	Flange
CG2H30070F-AMP2	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Evaluation Board	Flange
CG2H30070F	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Packaged Discrete Transistor	Flange
CMPA1C1D080F	No	GaN on SiC	12.75 GHz	13.25 GHz	90 W	25 dB	30%	40 V	Packaged MMIC	Flange
CGHV96100F2-AMP	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Evaluation Board	Flange
CGHV96100F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Packaged Discrete Transistor	Flange
CGHV40100F-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	100 W	17.5 dB	55%	50 V	Evaluation Board	Flange
CG2H80120D-GP4	Yes	GaN on SiC	DC	8 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGH60120D-GP4	No	GaN on SiC	DC	6 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGHV35120F	Yes	GaN on SiC	3.1 GHz	3.5 GHz	120 W	12.8 dB	62%	50 V	Packaged Discrete Transistor	Flange
CGHV96130F	Yes	GaN on SiC	8.4 GHz	9.6 GHz	130 W		42%	40 V	Packaged Discrete Transistor	Flange
CMPA2935150S-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CMPA2935150S	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CGHV35150F-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	50%		Evaluation Board	Flange
CGHV35150F	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	50%	50 V	Packaged Discrete Transistor	Flange
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
LTN/GTVA311801FA-V1	Yes	GaN on SiC	2.7 GHz	3.1 GHz	180 W	15 dB	70%	50 V	Packaged Discrete Transistor	Earless
GTVA311801FA-V1	Yes	GaN on SiC	2.7 GHz	3.1 GHz	180 W	15 dB	70%	50 V	Packaged Discrete Transistor	Earless
CGHV40180F-AMP3	Yes	GaN on SiC	0.96 GHz	1.25 GHz	200 W	24 dB	70%	28 V / 50 V	Evaluation Board	Flange
CGHV40180F	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Flange
CGH35240F-AMP	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGH35240F	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGHV14250F	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Packaged Discrete Transistor	Flange
CGHV14250P	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Packaged Discrete Transistor	Pill
CGHV14250F-AMP	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Evaluation Board	Flange
CGHV40320D-GP4	Yes	GaN on SiC	DC	4 GHz	320 W	19 dB	65%	50 V	Discrete Bare Die	Die
CGHV59350F-AMP	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Evaluation Board	Flange
PTVA123501FC-V1	Yes	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	55%	50 V	Packaged Discrete Transistor	Earless
PTVA123501EC-V2	Yes	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	55%	50 V	Packaged Discrete Transistor	Bolt Down
GTVA123501FA-V1	Yes	GaN on SiC	1.2 GHz	1.4 GHz	350 W	18 dB	71%	50 V	Packaged Discrete Transistor	Earless
CGHV59350F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV38375F	Yes	GaN on SiC	2.75 GHz	3.75 GHz	400 W	>10 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV35400F-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	60%	50 V	Evaluation Board	Flange
GTVA104001FA-V1	Yes	GaN on SiC	0.96 GHz	1.215 GHz	400 W	19 dB	70%	50 V	Packaged Discrete Transistor	Earless
CGHV35400F	Yes	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	60%	50 V	Packaged Discrete Transistor	Flange
PTVA104501EH-V1	Yes	LDMOS	0.96 GHz	1.215 GHz	450 W	17.5 dB	58%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV31500F1-AMP	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Evaluation Board	Flange
CGHV31500F1	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Packaged Discrete Transistor	Flange
CGHV35400F1	Yes	GaN on SiC	2.9 GHz	3.5 GHz	500 W	12 dB	60%	50 V	Packaged Discrete Transistor	Flange
LTN/GTVA355001EC-V1	Yes	GaN on SiC	2.9 GHz	3.5 GHz	500 W	>11.5 dB	65%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV31500F-AMP	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	60%	50 V	Evaluation Board	Flange
CGHV14500F-AMP	Yes	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	68%	50 V	Evaluation Board	Flange
CGHV31500F	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	60%	50 V	Packaged Discrete Transistor	Flange
CGHV14500F	Yes	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	68%	50 V	Packaged Discrete Transistor	Flange
GTVA126001EC-V1	Yes	GaN on SiC	1.2 GHz	1.4 GHz	600 W	20 dB	63%	50 V	Packaged Discrete Transistor	Bolt Down
GTVA107001FC-V1	Yes	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	70%	50 V	Packaged Discrete Transistor	Earless
GTVA107001EC-V1	Yes	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	70%	50 V	Packaged Discrete Transistor	Bolt Down
PTVA127002EV-V1	Yes	LDMOS	1.2 GHz	1.4 GHz	700 W	16 dB	56%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV14800F-AMP	Yes	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	65%	50 V	Evaluation Board	Flange
CGHV14800F	Yes	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	65%	50 V	Packaged Discrete Transistor	Flange
PTVA101K02EV-V1	Yes	LDMOS	1.03 GHz	1.09 GHz	900 W	18 dB	65%	50 V	Packaged Discrete Transistor	Bolt Down
LTN/GTVA101K42EV-V1	Yes	GaN on SiC	0.96 GHz	1.4 GHz	1400 W	17 dB	68%	50 V	Packaged Discrete Transistor	Bolt Down
GTVA101K42EV-V1	Yes	GaN on SiC	0.96 GHz	1.4 GHz	1400 W	17 dB	68%	50 V	Packaged Discrete Transistor	Bolt Down

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.

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Wolfspeed RF GaN meets 5G demands on PA design

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Simplifying Global Equipment Designs by Utilizing Silicon Carbide

Astrodyne TDI (ATDI) is leveraging Wolfspeed’s Silicon Carbide technology to address key challenges when designing equipment for a global market. Read on to see how ATDI’s Kodiak power supply and Wolfspeed’s Silicon Carbide gives customers the ability to use the same control and power topology across different utility voltage levels, ensuring high performance regardless of the input voltage level.

Technical Articles

Knowledge Center

Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Simplifying Global Equipment Designs by Utilizing Silicon Carbide