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所有航空航天与国防

数十年来,Wolfspeed 一直推动射频技术的进步发展,并成为商用和军用航空、空中交通管制、天气服务、飞行器到卫星的通信、太空探索等领域无线通信和雷达系统的核心技术。Wolfspeed的创新,包括了突破性碳化硅基氮化镓研发、完全整合的设计支持、以及定制组装等。所有这些创新都助力 Wolfspeed 不断地为客户提供在尺寸、重量和功率方面具有显著优势的解决方案。我们可作为完整的射频系统设计合作伙伴,为您提供碳化硅基氮化镓(已封装和裸芯片)和 LDMOS 器件丰富产品组合。

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频率(最大值)
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效率
工作电压
类型
封装类型
CMPA0530002S-AMP1
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
18 dB
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
18 dB
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
DC
6 GHz
8 W
>12 dB
65%
28 V
Discrete Bare Die
Die
CMPA0560008S
New
Yes
GaN on SiC
0.45 GHz
6 GHz
10 W
19 dB
40%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
2.7 GHz
3.5 GHz
15 W
33 dB
50%
50 V
Packaged MMIC
Plastic
Yes
GaN on SiC
6 GHz
18 GHz
25 W
20 dB
20%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.7 GHz
6 GHz
25 W
21 dB
36%
28 V
Packaged MMIC
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
DC
6 GHz
25 W
17 dB
28%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
2.7 GHz
3.5 GHz
30 W
32 dB
45%
50 V
Discrete Bare Die
Surface Mount
No
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
9 GHz
10 GHz
35 W
30 dB
45%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Evaluation Board
Plastic
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8 GHz
12 GHz
35 W
19 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.2 GHz
5.9 GHz
40 W
25 dB
54%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
8 GHz
11 GHz
40 W
28 dB
42%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
1.8 GHz
4.2 GHz
45 W
24 dB
45%
28 V
MMIC Bare Die
Flange
Yes
GaN on SiC
1.8 GHz
4.2 GHz
45 W
25 dB
45%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.2 GHz
5.9 GHz
50 W
30 dB
54%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
5 GHz
5.9 GHz
60 W
23 dB
50%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
4.8 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
4.5 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
5.2 GHz
5.9 GHz
80 W
22 dB
44%
40 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
2.7 GHz
3.8 GHz
80 W
34 dB
54%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
2.7 GHz
3.8 GHz
80 W
34 dB
54%
50 V
Packaged MMIC
Flange
No
GaN on SiC
12.75 GHz
13.25 GHz
90 W
25 dB
30%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
8 GHz
120 W
>12 dB
65%
28 V
Discrete Bare Die
Die
No
GaN on SiC
DC
6 GHz
120 W
>12 dB
65%
28 V
Discrete Bare Die
Die
Yes
GaN on SiC
3.1 GHz
3.5 GHz
120 W
12.8 dB
62%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
130 W
42%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
Packaged MMIC
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
Packaged MMIC
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
13.5 dB
50%
Evaluation Board
Flange
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
13.5 dB
50%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
6 GHz
170 W
17 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
Yes
GaN on SiC
0.96 GHz
1.25 GHz
200 W
24 dB
70%
28 V / 50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
2 GHz
200 W
24 dB
70%
28 V / 50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
3.1 GHz
3.5 GHz
240 W
11.6 dB
57%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
3.1 GHz
3.5 GHz
240 W
11.6 dB
57%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
1.6 GHz
250 W
18 dB
77%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
1.6 GHz
250 W
18 dB
77%
50 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
1.6 GHz
250 W
18 dB
77%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
4 GHz
320 W
19 dB
65%
50 V
Discrete Bare Die
Die
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Evaluation Board
Flange
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Earless
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
1.2 GHz
1.4 GHz
350 W
18 dB
71%
50 V
Packaged Discrete Transistor
Earless
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
2.75 GHz
3.75 GHz
400 W
>10 dB
55%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
2.9 GHz
3.5 GHz
400 W
11 dB
60%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
0.96 GHz
1.215 GHz
400 W
19 dB
70%
50 V
Packaged Discrete Transistor
Earless
Yes
GaN on SiC
2.9 GHz
3.5 GHz
400 W
11 dB
60%
50 V
Packaged Discrete Transistor
Flange
Yes
LDMOS
0.96 GHz
1.215 GHz
450 W
17.5 dB
58%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
13 dB
>65%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
13 dB
>65%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
12 dB
60%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
>11.5 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
60%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
68%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
60%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1.2 GHz
1.4 GHz
500 W
16 dB
68%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
0.96 GHz
1.215 GHz
700 W
20 dB
70%
50 V
Packaged Discrete Transistor
Earless
Yes
GaN on SiC
0.96 GHz
1.215 GHz
700 W
20 dB
70%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
LDMOS
1.2 GHz
1.4 GHz
700 W
16 dB
56%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
0.9 GHz
1.4 GHz
800 W
15 dB
65%
50 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1.2 GHz
1.4 GHz
800 W
16 dB
65%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
1.2 GHz
1.4 GHz
800 W
16 dB
65%
50 V
Packaged Discrete Transistor
Flange
Yes
LDMOS
1.03 GHz
1.09 GHz
900 W
18 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
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In The Studio: How EPC and Wolfspeed are Changing the Way We Live… For the Better

Continue the conversation with Guy Moxey and EPC CEO and Co-Founder Alex Lidow as they explore how GaN and Wolfspeed Silicon Carbide are changing the way we live, and where the future of these technologies could take us.
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