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GTVA104001FA-V1

High Power RF GaN on SiC HEMT 400 W; 50 V; 960 – 1215 MHz
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The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA104001FA-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
400 W
19 dB
70%
50 V
Packaged Discrete Transistor
Earless
Features
  • GaN on SiC HEMT technology
  • Broadband internal input matching
  • Typical Pulsed CW performance; 960 – 1215 MHz; 50V
    • Output power = 410 W
    • Drain Efficiency = 70 %
    • Gain = 19 dB
    • Pulse width = 128 μs
    • Duty cycle = 10 %
  • Pb-free and RoHS compliant
Applications
  • L-Band Radar Amplifiers
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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