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GTVA10700

High Power RF GaN on SiC HEMT 700 W; 50 V; 960 – 1215 MHz
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The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching; high efficiency; and thermally-enhanced packages; with bolt-down flange.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA107001FC-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
700 W
20 dB
70%
50 V
Packaged Discrete Transistor
Earless
GTVA107001EC-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
700 W
20 dB
70%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical pulsed CW performance (class AB); 1030 MHz; 50 V; 128 μs pulse width; 10% duty cycle; Output power P3dB = 890 W; Drain efficiency = 75%; Gain = 18 dB
  • Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V; 100 mA IDQ;128 μs pulse width; 10% duty cycle
  • Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS-compliant
Applications
  • Radar Amplifiers
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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