Skip to Main Content
Contact
浏览产品 (中文)

GTVA107001EC/FC-V1

High Power RF GaN on SiC HEMT 700 W; 50 V; 960 – 1215 MHz
Request Model Access

The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching; high efficiency; and thermally-enhanced packages; with bolt-down flange.

GTVA107001EC/FC-V1

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA107001EFC-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
700 W
20 dB
70%
50 V
Packaged Discrete Transistor
Bolt Down

Documents

Apply Filters
Document Type
Document Name
Data Sheets
Reference Designs
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.