GTVA107001EC/FC-V1
High Power RF GaN on SiC HEMT 700 W; 50 V; 960 – 1215 MHz
The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching; high efficiency; and thermally-enhanced packages; with bolt-down flange.
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GTVA107001EC/FC-V1
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GTVA107001EC/FC-V1
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA107001EFC-V1 | Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50 V | Packaged Discrete Transistor | Bolt Down |
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