Features
- Broadband internal input matching; Typical Pulsed CW performance; 1200 – 1400 MHz; 50V; Output power 350 W; Drain Efficiency 70 %; Gain 18 dB; Pulse width 300 μs; Duty cycle 10%; Pb-free and RoHS compliant
GTVA123501FA-V1
High Power RF GaN on SiC HEMT 350 W; 50 V; 1200 - 1400 MHz
NOTE: Not recommended for new designs. CGHV14250P is the recommended replacement.
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.
Products
GTVA123501FA-V1
No filters selected, showing all 1 products
GTVA123501FA-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA123501FA-V1 | No | GaN on SiC | 1.2 GHz | 1.4 GHz | 350 W | 18 dB | 71% | 50 V | Packaged Discrete Transistor | Earless |
Applications
- L-Band Radar Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Apply Filters
Document Type | Document Name |
|---|---|
| Data Sheets | |
| Reference Designs | |
| Product Catalog | |
| Sales Terms |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
SiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.