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GTVA12600

High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz
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The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequecy band. They feature input matching; high efficiency; and thermally-enhanced packages.

GTVA12600

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA126001FC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Earless
GTVA126001EC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA
  • Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers

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