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GTVA35500

High Power RF GaN on SiC HEMTs 500 W; 50 V; 2900 – 3500 MHz
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The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2900 to 3500 MHz frequency band. Featuring input and output matching; high efficiency; and a thermally-enhanced package.

GTVA35500

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA355001EC
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
65%
50 V
Packaged Discrete Transistor
Bolt Down
LTN/GTVA355001EC-V1
Yes
GaN on SiC
2.9 GHz
3.5 GHz
500 W
>11.5 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband internal input and output matching
  • Typical pulsed CW performance (class AB); 3500 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 500 W; Drain efficiency = 65%; Gain = 13 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers

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