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PTVA035002EV V1

PTVA035002EV-V1

High Power RF LDMOS FET 500 W; 50 V; 390 – 450 MHz

The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA035002EV-V1
Yes
LDMOS
0.39 GHz
0.45 GHz
450 W
18 dB
64%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Unmatched input and output
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS-compliant
  • Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 μsec pulse width; 10% duty cycle
Applications
  • Power Amplifiers in the 390 to 450 MHz frequency band
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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