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PTVA101K02EV V1

PTVA101K02EV-V1

High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA101K02EV-V1
Yes
LDMOS
1.03 GHz
1.09 GHz
900 W
18 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband input matching
  • High gain and effi ciency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition; (32μS ON / 18μS OFF) X 80;LTDF = 6.4%.
Applications
  • Power Amplifiers in the 1030 to 1090 MHz frequency band
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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