Skip to Main Content
Contact
浏览产品 (中文)

PTVA101K02EV-V1

High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA101K02EV-V1
Yes
LDMOS
1.03 GHz
1.09 GHz
900 W
18 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband input matching
  • High gain and effi ciency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition; (32μS ON / 18μS OFF) X 80;LTDF = 6.4%.
Applications
  • Power Amplifiers in the 1030 to 1090 MHz frequency band
Apply Filters
Document Type
Document Name
Data Sheets
Reference Designs
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.