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PTVA102001EA-V1

High Power RF LDMOS FET 200 W; 50 V; 960 – 1600 MHz

The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA102001EA-V1
Yes
LDMOS
0.96 GHz
1.6 GHz
200 W
18.5 dB
60%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Capable of handling 10:1 VSWR @50 V; 200 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 960 to 1600 MHz frequency band
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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