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PTVA12025

High Power RF LDMOS FET 25 W; 500 – 1400 MHz
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The PTVA12025 LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced surface-mount package or with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA120251EA-V2
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
18 dB
54%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA120252MT-V1
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
19 dB
64%
48 V
Packaged Discrete Transistor
Surface Mount
Features
  • Unmatched
  • High gain and efficiency
  • Integrated ESD protection
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS-compliant
Applications
  • Power Amplifiers in the 500 to 1400 MHz frequency band; Radar; Telecom
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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