Contact
中文
Home
PTVA12350

PTVA12350

h-36248-2_sm_1
High Power RF LDMOS FETs 350 W; 50 V; 1200 – 1400 MHz
Request Model Access

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA123501EC-V2
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA123501FC-V1
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Earless
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA123501EC-V2
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA123501FC-V1
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Earless
Features
  • Broadband internal input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 1200 to 1400 MHz frequency band; Radar
Apply Filters
Document Type
Document Name
Data Sheets
Reference Designs
Product Catalog
Sales Terms
Document Type
Document Name
Data Sheets
Reference Designs
Product Catalog
Sales Terms
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
highpower_wideband_lband_image
GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
RF PA 101_amplifier classes image
GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
Jamming man-portable pack2
GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
 Blog
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed