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PTVA12350

High Power RF LDMOS FETs 350 W; 50 V; 1200 – 1400 MHz
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The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA123501FC-V1
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Earless
PTVA123501EC-V2
Yes
LDMOS
1.2 GHz
1.4 GHz
350 W
17 dB
55%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband internal input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
Applications
  • Power Amplifiers in the 1200 to 1400 MHz frequency band; Radar
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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