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数十年来,Wolfspeed 一直推动射频技术的进步发展,并成为商用和军用航空、空中交通管制、天气服务、飞行器到卫星的通信、太空探索等领域无线通信和雷达系统的核心技术。Wolfspeed的创新,包括了突破性碳化硅基氮化镓研发、完全整合的设计支持、以及定制组装等。所有这些创新都助力 Wolfspeed 不断地为客户提供在尺寸、重量和功率方面具有显著优势的解决方案。我们可作为完整的射频系统设计合作伙伴,为您提供碳化硅基氮化镓(已封装和裸芯片)和 LDMOS 器件丰富产品组合。
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Products
产品SKU | 在线购买 | 索取样品 | 数据手册 | CAD模型 | 新设计推荐? | 技术 | 频率(最小值) | 频率(最大值) | 峰值输出功率 | 增益 | 效率 | 工作电压 | 类型 | 封装类型 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA1D1J001S-AMP1 New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA1D1J001S New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA0530002S-AMP1 | Yes | GaN on SiC | 0.5 GHz | 3 GHz | 2 W | 18 dB | 52% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA0530002S | Yes | GaN on SiC | 0.5 GHz | 3 GHz | 2 W | 18 dB | 52% | 28 V | Packaged MMIC | Surface Mount | ||||
CGH60008D-GP4 | Yes | GaN on SiC | DC | 6 GHz | 8 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | ||||
CMPA0560008S New | Yes | GaN on SiC | 0.5 GHz | 6 GHz | 10 W | 19 dB | 40% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA2735015S | Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 15 W | 33 dB | 50% | 50 V | Packaged MMIC | Plastic | ||||
CMPA601J025F New | Yes | GaN on SiC | 6 GHz | 18 GHz | 25 W | 20 dB | 20% | 28 V | Packaged MMIC | Flange | ||||
CMPA0760020F New | Yes | GaN on SiC | 0.7 GHz | 6 GHz | 25 W | 21 dB | 36% | 28 V | Packaged MMIC | Flange | ||||
CMPA801B025F | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28 V | Packaged MMIC | Flange | ||||
CMPA801B025D | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 28 dB | 45% | 28 V | MMIC Bare Die | Die | ||||
CMPA2735030S | Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 30 W | 32 dB | 45% | 50 V | Discrete Bare Die | Surface Mount | ||||
CMPA801B030F | No | GaN on SiC | 8 GHz | 11 GHz | 30 W | 16 dB | 36% | 28 V | Packaged MMIC | Flange | ||||
CMPA5585030F-AMP | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA5585030F | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA901A020S-AMP1 | Yes | GaN on SiC | 9 GHz | 10 GHz | 35 W | 30 dB | 45% | 28 V | Packaged MMIC | Plastic | ||||
CMPA2060035F1-AMP | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA9396025S-AMP1 | Yes | GaN on SiC | 9 GHz | 10 GHz | 35 W | 27 dB | 45% | 40 V | Evaluation Board | Plastic | ||||
CMPA2060035F1 | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA801B030F1 | Yes | GaN on SiC | 8 GHz | 12 GHz | 35 W | 19 dB | 36% | 28 V | Packaged MMIC | Flange | ||||
CMPA901A035F1 | Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 38% | 28 V | Packaged MMIC | Flange | ||||
CMPA5259025S | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 40 W | 25 dB | 54% | 28 V | Packaged MMIC | Plastic | ||||
CMPA801B030D1 | Yes | GaN on SiC | 8 GHz | 11 GHz | 40 W | 28 dB | 42% | 28 V | MMIC Bare Die | Die | ||||
CMPA901A035F-AMP | Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 35% | 28 V | Evaluation Board | Flange | ||||
CMPA901A035F | Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 35% | 28 V | Packaged MMIC | Flange | ||||
CMPA1842040F | Yes | GaN on SiC | 1.8 GHz | 4.2 GHz | 45 W | 24 dB | 45% | 28 V | MMIC Bare Die | Flange | ||||
CMPA1842040D | Yes | GaN on SiC | 1.8 GHz | 4.2 GHz | 45 W | 25 dB | 45% | 28 V | MMIC Bare Die | Die | ||||
CMPA851A050F New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 50 W | 29 dB | 28 V | Packaged MMIC | Flange | |||||
CMPA5259050F-AMP1 | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 50 W | 30 dB | 54% | 28 V | Packaged MMIC | Flange | ||||
CMPA5259050D | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 50 W | 30 dB | 54% | 28 V | MMIC Bare Die | Die | ||||
CGHV96050F2-AMP | Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Evaluation Board | Flange | ||||
CGHV96050F2 | Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Packaged Discrete Transistor | Flange | ||||
CMPA5259050D1 New | Yes | GaN on SiC | 5 GHz | 5.9 GHz | 60 W | 23 dB | 50% | 28 V | MMIC Bare Die | Die | ||||
CGHV59070F-AMP | Yes | GaN on SiC | 4.8 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Evaluation Board | Flange | ||||
CGHV59070F | Yes | GaN on SiC | 4.5 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Packaged Discrete Transistor | Flange | ||||
CMPA2735075F1 | Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 75 W | 29 dB | 57% | 28 V | Packaged MMIC | Flange | ||||
CMPA851A050S New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 80 W | 29 dB | 28 V | Packaged MMIC | Surface Mount | |||||
CMPA851A050D New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 80 W | 29 dB | 28 V | MMIC Bare Die | Die | |||||
CMPA5259080S-AMP1 | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 80 W | 22 dB | 44% | 40 V | Packaged MMIC | Surface Mount | ||||
CMPA2738060F-AMP | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | 54% | 50 V | Evaluation Board | Flange | ||||
CMPA2738060F | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | 54% | 50 V | Packaged MMIC | Flange | ||||
CMPA1C1D080F | No | GaN on SiC | 12.75 GHz | 13.25 GHz | 90 W | 25 dB | 30% | 40 V | Packaged MMIC | Flange | ||||
CMPA5259100S New | Yes | GaN on SiC | 5 GHz | 5.9 GHz | 100 W | 25 dB | 50 V | Packaged MMIC | Surface Mount | |||||
CGHV96100F2-AMP | Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 100 W | 10 dB | 45% | 40 V | Evaluation Board | Flange | ||||
CG2H80120D-GP4 | Yes | GaN on SiC | DC | 8 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | ||||
CGH60120D-GP4 | No | GaN on SiC | DC | 6 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | ||||
CGHV35120F | Yes | GaN on SiC | 3.1 GHz | 3.5 GHz | 120 W | 12.8 dB | 62% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV96130F | Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 130 W | 42% | 40 V | Packaged Discrete Transistor | Flange | |||||
CMPA2935150S-AMP | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 150 W | Packaged MMIC | ||||||||
CMPA2935150S | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 150 W | Packaged MMIC | ||||||||
CGHV35150F-AMP | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 150 W | 13.5 dB | 50% | Evaluation Board | Flange | |||||
CGHV60170D-GP4 | Yes | GaN on SiC | DC | 6 GHz | 170 W | 17 dB | 65% | 50 V | Discrete Bare Die | Die | ||||
LTN/GTVA311801FA-V1 | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 180 W | 15 dB | 70% | 50 V | Packaged Discrete Transistor | Earless | ||||
GTVA311801FA-V1 | No | GaN on SiC | 2.7 GHz | 3.1 GHz | 180 W | 15 dB | 70% | 50 V | Packaged Discrete Transistor | Earless | ||||
CGH35240F-AMP | Yes | GaN on SiC | 3.1 GHz | 3.5 GHz | 240 W | 11.6 dB | 57% | 28 V | Packaged Discrete Transistor | Flange | ||||
CGH35240F | Yes | GaN on SiC | 3.1 GHz | 3.5 GHz | 240 W | 11.6 dB | 57% | 28 V | Packaged Discrete Transistor | Flange | ||||
CGHV14250F | Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV14250P | Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV14250F-AMP | Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Evaluation Board | Flange | ||||
CGHV40320D-GP4 | Yes | GaN on SiC | DC | 4 GHz | 320 W | 19 dB | 65% | 50 V | Discrete Bare Die | Die | ||||
CGHV59350F-AMP | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 350 W | 11 dB | 55% | 50 V | Evaluation Board | Flange | ||||
PTVA123501FC-V1 | Yes | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50 V | Packaged Discrete Transistor | Earless | ||||
PTVA123501EC-V2 | Yes | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
GTVA123501FA-V1 | No | GaN on SiC | 1.2 GHz | 1.4 GHz | 350 W | 18 dB | 71% | 50 V | Packaged Discrete Transistor | Earless | ||||
CGHV38375F | Yes | GaN on SiC | 2.75 GHz | 3.75 GHz | 400 W | >10 dB | 55% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV35400F-AMP | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 400 W | 11 dB | 60% | 50 V | Evaluation Board | Flange | ||||
GTVA104001FA-V1 | No | GaN on SiC | 0.96 GHz | 1.215 GHz | 400 W | 19 dB | 70% | 50 V | Packaged Discrete Transistor | Earless | ||||
PTVA104501EH-V1 | Yes | LDMOS | 0.96 GHz | 1.215 GHz | 450 W | 17.5 dB | 58% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
CGHV31500F1-AMP | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 13 dB | >65% | 50 V | Evaluation Board | Flange | ||||
CGHV31500F1 | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 13 dB | >65% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV35400F1 | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 500 W | 12 dB | 60% | 50 V | Packaged Discrete Transistor | Flange | ||||
LTN/GTVA355001EC-V1 | No | GaN on SiC | 2.9 GHz | 3.5 GHz | 500 W | >11.5 dB | 65% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
CGHV31500F-AMP | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 12.75 dB | 60% | 50 V | Evaluation Board | Flange | ||||
CGHV14500F-AMP | Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 500 W | 16 dB | 68% | 50 V | Evaluation Board | Flange | ||||
GTVA126001EC-V1 | Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 600 W | 20 dB | 63% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
GTVA107001FC-V1 | Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50 V | Packaged Discrete Transistor | Earless | ||||
GTVA107001EC-V1 | Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
PTVA127002EV-V1 | Yes | LDMOS | 1.2 GHz | 1.4 GHz | 700 W | 16 dB | 56% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
CGHV14800F1 New | Yes | GaN on SiC | 0.9 GHz | 1.4 GHz | 800 W | 15 dB | 65% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV14800F-AMP | Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 800 W | 16 dB | 65% | 50 V | Evaluation Board | Flange | ||||
CGHV14800F | Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 800 W | 16 dB | 65% | 50 V | Packaged Discrete Transistor | Flange | ||||
PTVA101K02EV-V1 | Yes | LDMOS | 1.03 GHz | 1.09 GHz | 900 W | 18 dB | 65% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
LTN/GTVA101K42EV-V1 | Yes | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
GTVA101K42EV-V1 | Yes | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50 V | Packaged Discrete Transistor | Bolt Down |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.