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数十年来，Wolfspeed 一直推动射频技术的进步发展，并成为商用和军用航空、空中交通管制、天气服务、飞行器到卫星的通信、太空探索等领域无线通信和雷达系统的核心技术。Wolfspeed的创新，包括了突破性碳化硅基氮化镓研发、完全整合的设计支持、以及定制组装等。所有这些创新都助力 Wolfspeed 不断地为客户提供在尺寸、重量和功率方面具有显著优势的解决方案。我们可作为完整的射频系统设计合作伙伴，为您提供碳化硅基氮化镓（已封装和裸芯片）和 LDMOS 器件丰富产品组合。

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产品SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA1D1J001S-AMP1 New	Yes	GaN on SiC	12.7 GHz	18 GHz	1 W	23 dB	30%	28 V	Packaged MMIC	Surface Mount
CMPA1D1J001S New	Yes	GaN on SiC	12.7 GHz	18 GHz	1 W	23 dB	30%	28 V	Packaged MMIC	Surface Mount
CMPA0530002S-AMP1	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CMPA0530002S	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CMPA851A005S New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	4.5 W	31 dB		28 V	Packaged MMIC	Plastic
CGH60008D-GP4	Yes	GaN on SiC	DC	6 GHz	8 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CMPA0560008S-AMP1	Yes	GaN on SiC	0.5 GHz	6 GHz	10 W	19 dB	40%	28 V	Packaged MMIC	Surface Mount
CMPA0560008S	Yes	GaN on SiC	0.5 GHz	6 GHz	10 W	19 dB	40%	28 V	Packaged MMIC	Surface Mount
CMPA851A012S-AMP1 New	Yes	GaN on SiC	8.5 GHz	10 GHz	20 W	29 dB		28 V	Packaged MMIC	Plastic
CMPA851A012D New	Yes	GaN on SiC	8.5 GHz	10 GHz	20 W	28 dB		28 V	MMIC Bare Die	Die
CMPA851A012S New	Yes	GaN on SiC	8.5 GHz	10 GHz	20 W	29 dB		28 V	Packaged MMIC	Plastic
CMPA0760020F-AMP New	Yes	GaN on SiC	0.7 GHz	6 GHz	25 W	21 dB	36%	28 V	Packaged MMIC	Flange
CMPA601J025F-AMP New	Yes	GaN on SiC	6 GHz	18 GHz	25 W	20 dB	20%	22 V	Packaged MMIC	Flange
CMPA601J025F New	Yes	GaN on SiC	6 GHz	18 GHz	25 W	20 dB	20%	22 V	Packaged MMIC	Flange
CMPA0760020F New	Yes	GaN on SiC	0.7 GHz	6 GHz	25 W	21 dB	36%	28 V	Packaged MMIC	Flange
CMPA2735030S	Yes	GaN on SiC	2.7 GHz	3.5 GHz	30 W	32 dB	45%	50 V	Discrete Bare Die	Surface Mount
CMPA5585030F-AMP	Yes	GaN on SiC	5.5 GHz	8.5 GHz	30 W	25 dB	30%	28 V	Evaluation Board	Flange
CMPA5585030F	Yes	GaN on SiC	5.5 GHz	8.5 GHz	30 W	25 dB	30%	28 V	Packaged MMIC	Flange
CMPA901A020S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	30 dB	45%	28 V	Packaged MMIC	Plastic
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange
CMPA9396025S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	45%	40 V	Evaluation Board	Plastic
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA801B030F1	Yes	GaN on SiC	8 GHz	12 GHz	35 W	19 dB	36%	28 V	Packaged MMIC	Flange
CMPA851A025S-AMP1 New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	40 W	29.5 dB		28 V	Packaged MMIC	Plastic
CMPA851A025D New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	40 W	30 dB		28 V	MMIC Bare Die	Die
CMPA851A025S New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	40 W	29.5 dB		28 V	Packaged MMIC	Plastic
CMPA901A035F1	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	38%	28 V	Packaged MMIC	Flange
CMPA5259025S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	40 W	25 dB	54%	28 V	Packaged MMIC	Plastic
CMPA801B030D1	Yes	GaN on SiC	8 GHz	11 GHz	40 W	28 dB	42%	28 V	MMIC Bare Die	Die
CMPA901A035F-AMP	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Evaluation Board	Flange
CMPA1842040F	Yes	GaN on SiC	1.8 GHz	4.2 GHz	45 W	24 dB	45%	28 V	MMIC Bare Die	Flange
CMPA1842040D	Yes	GaN on SiC	1.8 GHz	4.2 GHz	45 W	25 dB	45%	28 V	MMIC Bare Die	Die
CMPA851A050F-AMP New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	50 W	29 dB		28 V	Packaged MMIC	Flange
CMPA851A050F New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	50 W	29 dB		28 V	Packaged MMIC	Flange
CMPA5259050F-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CMPA1E1F060F New	Yes	GaN on SiC	13.4 GHz	15.5 GHz	60 W	26 dB		28 V	Packaged MMIC	Flange
CMPA1F1H060F New	Yes	GaN on SiC	15.4 GHz	17.7 GHz	60 W	25 dB		28 V	Packaged MMIC	Flange
CMPA5259050D1 New	Yes	GaN on SiC	5 GHz	5.9 GHz	60 W	23 dB	50%	28 V	MMIC Bare Die	Die
CMPA1H1J050F-AMP New	Yes	GaN on SiC	17.3 GHz	18.4 GHz	60 W	25 dB	30%	28 V	Evaluation Board	Flange
CMPA1H1J050F New	Yes	GaN on SiC	17.3 GHz	18.4 GHz	60 W	25 dB	30%	28 V	Packaged MMIC	Flange
CMPA1E1F060D New	Yes	GaN on SiC	13.75 GHz	15.5 GHz	60 W	26 dB		28 V	MMIC Bare Die	Die
CMPA2735075F1	Yes	GaN on SiC	2.7 GHz	3.5 GHz	75 W	29 dB	57%	28 V	Packaged MMIC	Flange
CMPA851A050S-AMP1 New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	Packaged MMIC	Surface Mount
CMPA1F1H060S New	Yes	GaN on SiC	15.4 GHz	17.7 GHz	80 W	25 dB		28 V	Packaged MMIC	Plastic
CMPA1F1H060D New	Yes	GaN on SiC	15.4 GHz	17.7 GHz	80 W	26 dB		28 V	MMIC Bare Die	Die
CMPA851A050S New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	Packaged MMIC	Surface Mount
CMPA851A050D New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	MMIC Bare Die	Die
CMPA5259080S-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	80 W	22 dB	44%	40 V	Packaged MMIC	Surface Mount
CMPA1C1D080F	No	GaN on SiC	12.75 GHz	13.25 GHz	90 W	25 dB	30%	40 V	Packaged MMIC	Flange
CMPA5259100S-AMP1 New	Yes	GaN on SiC	5 GHz	5.9 GHz	100 W	25 dB		50 V	Packaged MMIC	Surface Mount
CMPA5259100S New	Yes	GaN on SiC	5 GHz	5.9 GHz	100 W	25 dB		50 V	Packaged MMIC	Surface Mount
CG2H80120D-GP4	Yes	GaN on SiC	DC	8 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGH60120D-GP4	No	GaN on SiC	DC	6 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGHV96130F	Yes	GaN on SiC	8.4 GHz	9.6 GHz	130 W		42%	40 V	Packaged Discrete Transistor	Flange
CMPA2935150S-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CMPA2935150S	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
CGH35240F-AMP	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGH35240F	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGHV14250F	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Packaged Discrete Transistor	Flange
CGHV14250P	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Packaged Discrete Transistor	Pill
CGHV14250F-AMP	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Evaluation Board	Flange
CGHV1A250F-AMP New	Yes	GaN on SiC	8.8 GHz	9.6 GHz	300 W	12 dB	40%	45 V	Packaged Discrete Transistor	Flange
CGHV1A250F New	Yes	GaN on SiC	8.8 GHz	9.6 GHz	300 W	12 dB	40%	45 V	Packaged Discrete Transistor	Flange
WST33H0NC New	Yes	GaN on SiC	2.4 GHz	2.5 GHz	300 W	17 dB	75%	50 V	Packaged Discrete Transistor	Push-Pull
CGHV40320D-GP4	Yes	GaN on SiC	DC	4 GHz	320 W	19 dB	65%	50 V	Discrete Bare Die	Die
CGHV38375F	Yes	GaN on SiC	2.75 GHz	3.75 GHz	400 W	>10 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV31500F1-AMP	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Evaluation Board	Flange
CGHV31500F1	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Packaged Discrete Transistor	Flange
CGHV35400F1	Yes	GaN on SiC	2.9 GHz	3.5 GHz	500 W	12 dB	60%	50 V	Packaged Discrete Transistor	Flange
GTVA126001EC-V1	Yes	GaN on SiC	1.2 GHz	1.4 GHz	600 W	20 dB	63%	50 V	Packaged Discrete Transistor	Bolt Down
GTVA107001FC-V1	Yes	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	70%	50 V	Packaged Discrete Transistor	Earless
GTVA107001EC-V1	Yes	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	70%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV14800F1	Yes	GaN on SiC	0.9 GHz	1.4 GHz	800 W	15 dB	65%	50 V	Packaged Discrete Transistor	Flange
LTN/GTVA101K42EV-V1	Yes	GaN on SiC	0.96 GHz	1.4 GHz	1400 W	17 dB	68%	50 V	Packaged Discrete Transistor	Bolt Down
GTVA101K42EV-V1	Yes	GaN on SiC	0.96 GHz	1.4 GHz	1400 W	17 dB	68%	50 V	Packaged Discrete Transistor	Bolt Down

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Thermal Considerations for High-Power GaN RF Amplifiers

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Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

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Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.

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所有航空航天与国防

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Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Improving Pulse Fidelity in RF Power Amplifiers

所有航空航天与国防

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.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Thermal Considerations for High-Power GaN RF Amplifiers

Thermal Considerations for High-Power GaN RF Amplifiers