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CG2H40035

Wolfspeed RF CG2H40035 flange and pill
35-W RF Power GaN HEMT
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Wolfspeed’s CG2H40035 is an unmatched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down; flange package and solder-down; pill packages.

Products

CG2H40035

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CG2H40035

Product SKU
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Data Sheet
CAD Model
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H40035F-AMP1
Yes
GaN on SiC
0.5 GHz
3 GHz
35 W
14 dB
50%
28 V
Evaluation Board
Flange
CG2H40035P
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Packaged Discrete Transistor
Pill
CG2H40035F-AMP
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Evaluation Board
Flange
CG2H40035F
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Packaged Discrete Transistor
Flange
Features
  • Up to 6 GHz Operation
  • 40 W typical PSAT
  • 64% Efficiency at PSAT
  • 14 dB Small Signal Gain at 3.5 GHz
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms

Documents, Tools & Support

Documents

Document Type
Document Name
Design Files
Design Files
Application Notes
Application Notes
Data Sheets
S-parameters
S-parameters
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Product Catalog
Sales Terms
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Thermal Considerations for High-Power GaN RF Amplifiers

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