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CGH40035

CGH40035

Wolfspeed CGH40035 35-W RF Power GaN HEMT
35-W RF Power GaN HEMT
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Note: CGH40035F is Not Recommended for New Designs. Refer to CCG2H40035F

Wolfspeed’s CGH40035F is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down flange package.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH40035F
No
GaN on SiC
DC
6 GHz
35 W
>13 dB
60%
28 V
Packaged Discrete Transistor
Flange
CGH40035F-AMP
No
GaN on SiC
3.3 GHz
3.7 GHz
35 W
>13 dB
NA
28 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH40035F
No
GaN on SiC
DC
6 GHz
35 W
>13 dB
60%
28 V
Packaged Discrete Transistor
Flange
CGH40035F-AMP
No
GaN on SiC
3.3 GHz
3.7 GHz
35 W
>13 dB
NA
28 V
Evaluation Board
Flange
Features
  • Up to 4 GHz Operation
  • 15 dB Small Signal Gain at 2.0 GHz
  • 13 dB Small Signal Gain at 4.0 GHz
  • 45 W typical PSAT
  • 60 % Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
Apply Filters
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Data Sheets
Version: 4.1
Design Files
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Woo Lee – Sang-Ho Kam – and Yoon-Ha Jeong – This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Technical Papers & Articles
by Khaled Bathic; Georg Boeck
This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band. Suitable choice of device size ratio as well as harmonic load tuning at back-off and maximum power operations were also considered – resulting in superior performance over the targeted design band.
Version: Design
Product Ecology
CGH27060F – CGH35060F1 – CGH35060F2 – CGH40035F – CGH40045F – CGH40120F – CGHV35150F – CGHV40050F – CGHV40100F
Version: 1.0
Product Ecology
CGH27060F – CGH35060F1 – CGH35060F2 – CGH40035F – CGH40045F – CGH40120F – CGHV35150F – CGHV40050F – CGHV40100F
Version: RS4018052019
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Data Sheets
Version: 4.1
Design Files
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Woo Lee – Sang-Ho Kam – and Yoon-Ha Jeong – This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Technical Papers & Articles
by Khaled Bathic; Georg Boeck
This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band. Suitable choice of device size ratio as well as harmonic load tuning at back-off and maximum power operations were also considered – resulting in superior performance over the targeted design band.
Version: Design
Product Ecology
CGH27060F – CGH35060F1 – CGH35060F2 – CGH40035F – CGH40045F – CGH40120F – CGHV35150F – CGHV40050F – CGHV40100F
Version: 1.0
Product Ecology
CGH27060F – CGH35060F1 – CGH35060F2 – CGH40035F – CGH40045F – CGH40120F – CGHV35150F – CGHV40050F – CGHV40100F
Version: RS4018052019
Product Catalog
Version: 1.0
Sales Terms
Version: M
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