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CGH55030F2/P2

CGH55030F2/P2

cgh55030f2andp2_med_1
25-W; C-band; Unmatched; GaN HEMT
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Wolfspeed’s CGH55030F2/CGH55030P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW-saturated amplifiers. The transistor is available in both screw-down; flange and solder-down pill packages. Based on appropriate external match adjustment; the CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.

Product SKU
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH55030F2
Yes
GaN on SiC
DC
6 GHz
25 W
12 dB
60%
28 V
Packaged Discrete Transistor
Flange
CGH55030P2
Yes
GaN on SiC
DC
6 GHz
25 W
12 dB
60%
28 V
Packaged Discrete Transistor
Pill
CGH55030F2-AMP
Yes
GaN on SiC
5.4 GHz
5.9 GHz
25 W
12 dB
NA
28 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH55030F2
Yes
GaN on SiC
DC
6 GHz
25 W
12 dB
60%
28 V
Packaged Discrete Transistor
Flange
CGH55030P2
Yes
GaN on SiC
DC
6 GHz
25 W
12 dB
60%
28 V
Packaged Discrete Transistor
Pill
CGH55030F2-AMP
Yes
GaN on SiC
5.4 GHz
5.9 GHz
25 W
12 dB
NA
28 V
Evaluation Board
Flange
Features
  • 4.5 to 6.0 GHz Operation
  • 12 dB Small Signal Gain at 5.65 GHz
  • 30 W typical PSAT
  • 60% Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Amplifiers for Drivers and Gain Blocks
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