Features
- Up to 15 GHz Operation
- 8 W Typical Output Power
- 17 dB Gain at 6.0 GHz
- 15 dB Gain at 9.0 GHz
- Application circuits for 5.8 – 7.2 GHz; 7.9 – 8.4 GHz; and 8.5 – 9.6 GHz.
- High degree of APD and DPD correction can be applied
CGHV1F006
6-W; DC - 15.0 GHz; 40-V; GaN HEMT
Wolfspeed’s CGHV1F006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on a C-Band (5.5 – 6.5-GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz – 7.2 GHz and X-Band at 7.9 – 8.4 GHz and 8.5 – 9.6 GHz. The CGHV1F006 operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40 V to as low as 20-V VDD; maintaining high gain and efficiency.
Products
CGHV1F006
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CGHV1F006
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV1F006S-AMP3 | Yes | GaN on SiC | 8.5 GHz | 9.6 GHz | 6 W | >7 dB | 52% | 40 V | Evaluation Board | Surface Mount | ||||
CGHV1F006S-AMP1 | Yes | GaN on SiC | 5.85 GHz | 7.2 GHz | 6 W | >7 dB | 52% | 40 V | Evaluation Board | Surface Mount | ||||
CGHV1F006S | Yes | GaN on SiC | DC | 15 GHz | 6 W | >7 dB | 52% | 40 V | Packaged Discrete Transistor | Surface Mount |
Applications
- L; S; C; X and Ku-Band Amplifiers
Documents, Tools & Support
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Documents
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Document Type | Document Name |
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| Design Files | |
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| Application Notes | |
| Data Sheets | |
| S-parameters | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
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