Skip to Main Content
Contact
  • English
  • 简体中文
  • 繁體中文
View Cart

CGHV59070

Wolfspeed CGHV59070 composite flange and pill package
70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems
Request Model Access
Wolfspeed’s CGHV59070 is an internally matched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070; operating from a 50 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

Products

CGHV59070

No filters selected, showing all 3 products

CGHV59070

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV59070P
Yes
GaN on SiC
4.5 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Packaged Discrete Transistor
Pill
CGHV59070F-AMP
Yes
GaN on SiC
4.8 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Evaluation Board
Flange
CGHV59070F
Yes
GaN on SiC
4.5 GHz
5.9 GHz
70 W
12 dB
50%
50 V
Packaged Discrete Transistor
Flange
Features
  • 4.4 – 5.9 GHz Operation
  • 90 W POUT typical at 50 V
  • 14 dB Power Gain
  • 55 % Drain Efficiency
  • Internally Matched
Applications
  • Marine Radar
  • Weather Monitoring
  • Air Traffic Control
  • Maritime Vessel Traffic Control
  • Port Security
  • Troposcatter Communications
  • Beyond Line of Sight – BLOS
  • Satellite Communications

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Design Files
Data Sheets
S-parameters
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Buy OnlineFind a Distributor

Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading  Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Instagram
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.