Features
- 4.4 – 5.9 GHz Operation
- 90 W POUT typical at 50 V
- 14 dB Power Gain
- 55 % Drain Efficiency
- Internally Matched
CGHV59070
70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems
Wolfspeed’s CGHV59070 is an internally matched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070; operating from a 50 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.
Products
CGHV59070
No filters selected, showing all 3 products
CGHV59070
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV59070P | Yes | GaN on SiC | 4.5 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV59070F-AMP | Yes | GaN on SiC | 4.8 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Evaluation Board | Flange | ||||
CGHV59070F | Yes | GaN on SiC | 4.5 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Packaged Discrete Transistor | Flange |
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
- Troposcatter Communications
- Beyond Line of Sight – BLOS
- Satellite Communications
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Design Files | |
| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Product Catalog | |
| Sales Terms |
Knowledge Center
Continue Reading Technical Articles
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading Technical Articles