Features
- 4.4 – 5.9 GHz Operation
- 90 W POUT typical at 50 V
- 14 dB Power Gain
- 55 % Drain Efficiency
- Internally Matched
CGHV59070
70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems
Wolfspeed’s CGHV59070 is an internally matched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070; operating from a 50 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.
Products
CGHV59070
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CGHV59070
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV59070P | Yes | GaN on SiC | 4.5 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV59070F-AMP | Yes | GaN on SiC | 4.8 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Evaluation Board | Flange | ||||
CGHV59070F | Yes | GaN on SiC | 4.5 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50 V | Packaged Discrete Transistor | Flange |
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
- Troposcatter Communications
- Beyond Line of Sight – BLOS
- Satellite Communications
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Design Files | |
| Data Sheets | |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
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