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CGHV59350

CGHV59350

cghv59350f_1
350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT
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Wolfspeed CGHV59350 is a GaN HEMT designed with high-efficiency; high-gain; and wide-bandwidth. It’s ideal for 5.2-5.9 GHz c-band radar-amplifier applications.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV59350P
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Pill
CGHV59350F
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Flange
CGHV59350F-AMP
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
NA
50 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV59350P
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Pill
CGHV59350F
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Flange
CGHV59350F-AMP
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
NA
50 V
Evaluation Board
Flange
Features
  • 5.2 – 5.9 GHz Operation
  • 470 W Typical Output Power
  • 10.7 dB Power Gain
  • 60% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • C-Band Radar amplifiers
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Data Sheets
S-parameters
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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