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CGHV59350

Wolfspeed CGHV59350F-P flange and pill package composite
350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT
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Wolfspeed CGHV59350 is a GaN HEMT designed with high-efficiency; high-gain; and wide-bandwidth. It's ideal for 5.2-5.9 GHz c-band radar-amplifier applications.

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CGHV59350

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CGHV59350

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Data Sheet
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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV59350P
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Pill
CGHV59350F-AMP2
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Evaluation Board
Flange
CGHV59350F
Yes
GaN on SiC
5.2 GHz
5.9 GHz
350 W
11 dB
55%
50 V
Packaged Discrete Transistor
Flange
Features
  • 5.2 – 5.9 GHz Operation
  • 470 W Typical Output Power
  • 10.7 dB Power Gain
  • 60% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • C-Band Radar amplifiers

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Design Files
Data Sheets
S-parameters
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading  Technical Articles

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