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CGHV96050F2

50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT
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Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

CGHV96050F2

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV96050F2-AMP
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Evaluation Board
Flange
CGHV96050F2
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Features
  • 8.4 – 9.6 GHz Operation
  • 80 W POUT typical
  • 10 dB Power Gain
  • 55 % Typical PAE
  • 50 Ohm Internally Matched
  • <0.1 dB Power Droop
Applications
  • Marine Radar
  • Weather Monitoring
  • Air Traffic Control
  • Maritime Vessel Traffic Control
  • Port Security

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Design Files
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Technical Papers & Articles
by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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