Features
- 17 dB Small Signal Gain
- 3 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
CMPA0060002
2-W; 20-MHz – 6000-MHz; GaN MMIC Power Amplifier
Wolfspeed’s CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach; enabling extremely wide bandwidths to be achieved in a small footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.
Products
CMPA0060002
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CMPA0060002
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA0060002F1 | Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Packaged MMIC | Flange | ||||
CMPA0060002D | Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 30% | 28 V | MMIC Bare Die | Die | ||||
CMPA0060002F | Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Packaged MMIC | Flange | ||||
CMPA0060002F-AMP | Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Evaluation Board | Flange | ||||
CMPA0060002F1-AMP | Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Evaluation Board | Flange |
Applications
- Ultra Broadband Amplifiers
- Fiber Drivers
- Test Instrumentation
- EMC Amplifier Drivers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Design Files | |
| Design Files | |
| Design Files | |
| Data Sheets | |
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| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center
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