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CMPA2060035

Wolfspeed CMPA2060035F
35-W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
Note: For new design activity with CMPA2060035D and CMPA2060035F, please consider our next-generation, higher performing solution, respectively - CMPA2060035D1 and CMPA2060035F1 Wolfspeed’s CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

Products

CMPA2060035

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CMPA2060035

Product SKU
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Data Sheet
CAD Model
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA2060035D
No
GaN on SiC
2 GHz
6 GHz
35 W
29 dB
42%
28 V
MMIC Bare Die
Die
CMPA2060035F-AMP1
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
32 V
Evaluation Board
Flange
CMPA2060035F-AMP
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
28 V
Evaluation Board
Flange
CMPA2060035F
No
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
28 V
Packaged MMIC
Flange
CMPA2060035F1
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Packaged MMIC
Flange
CMPA2060035F1-AMP
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Evaluation Board
Flange
Features
  • 28 dB Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 32 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Ultra Broadband Drivers
  • Fiber Drivers
  • Test Instrumentation
  • EMC Amplifier Drivers

Documents, Tools & Support

Documents

Document Type
Document Name
Design Files
Design Files
Design Files
Design Files
Data Sheets
Data Sheets
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Technical Papers & Articles
Technical Papers & Articles
Product Catalog
Sales Terms
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading  Technical Articles

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