Features
- 28 dB Small Signal Gain
- 35 W Typical PSAT
- Operation up to 32 V
- High Breakdown Voltage
- High Temperature Operation
CMPA2060035
35-W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
Note: For new design activity with CMPA2060035D and CMPA2060035F, please consider our next-generation, higher performing solution, respectively - CMPA2060035D1 and CMPA2060035F1
Wolfspeed’s CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.
Products
CMPA2060035
No filters selected, showing all 6 products
CMPA2060035
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA2060035D | No | GaN on SiC | 2 GHz | 6 GHz | 35 W | 29 dB | 42% | 28 V | MMIC Bare Die | Die | ||||
CMPA2060035F-AMP1 | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 32 V | Evaluation Board | Flange | ||||
CMPA2060035F-AMP | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 28 V | Evaluation Board | Flange | ||||
CMPA2060035F | No | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 28 V | Packaged MMIC | Flange | ||||
CMPA2060035F1 | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA2060035F1-AMP | Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Evaluation Board | Flange |
Applications
- Ultra Broadband Drivers
- Fiber Drivers
- Test Instrumentation
- EMC Amplifier Drivers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Design Files | |
| Design Files | |
| Design Files | |
| Design Files | |
| Data Sheets | |
| Data Sheets | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
|
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
|
| Technical Papers & Articles | |
| Technical Papers & Articles | |
| Product Catalog | |
| Sales Terms |
Knowledge Center
Continue Reading Technical Articles
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading Technical Articles