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CMPA2560025

Wolfspeed CMPA2560025F 25-W 2500-6000MHz GaN MMIC
25-W; 2.5 – 6.0-GHz; GaN MMIC Power Amplifier

Wolfspeed’s CMPA2560025 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier; enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

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Frequency Min
Frequency Max
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CMPA2560025D
Yes
GaN on SiC
2.5 GHz
6 GHz
25 W
24 dB
31%
28 V
MMIC Bare Die
Die
CMPA2560025F-AMP
Yes
GaN on SiC
2.5 GHz
6 GHz
25 W
24 dB
31%
28 V
Evaluation Board
Flange
CMPA2560025F
Yes
GaN on SiC
2.5 GHz
6 GHz
25 W
24 dB
31%
28 V
Packaged MMIC
Flange
Features
  • 24 dB Small Signal Gain
  • 25 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Ultra Broadband Amplifiers
  • Fiber Drivers
  • Test Instrumentation
  • EMC Amplifier Drivers
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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 Technical Articles

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