Features
- 30 dB Small Signal Gain
- 50% Efficiency at PSAT
- Operation up to 28 V
- High Breakdown Voltage
CMPA5259025
25-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers
Wolfspeed’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259025F ideal for 5.2 – 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Products
CMPA5259025
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CMPA5259025
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA5259025S | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 40 W | 25 dB | 54% | 28 V | Packaged MMIC | Plastic |
Applications
- Radar Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Design Files | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Technical Papers & Articles | |
| Technical Papers & Articles | |
| Product Catalog | |
| Sales Terms |
Knowledge Center
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