Features
- 30 dB Small Signal Gain
- 50% Efficiency at PSAT
- Operation up to 28 V
- High Breakdown Voltage
CMPA5259025
25-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers
Wolfspeed’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259025F ideal for 5.2 – 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Products
CMPA5259025
CMPA5259025
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA5259025F-AMP | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 25 W | 34 dB | 50% | 28 V | Evaluation Board | Flange | ||||
CMPA5259025F | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 37 W | 32 dB | 50% | 28 V | Packaged Discrete Transistor | Flange | ||||
CMPA5259025S | Yes | GaN on SiC | 5.2 GHz | 5.9 GHz | 40 W | 25 dB | 54% | 28 V | Packaged MMIC | Plastic |
Applications
- Radar Amplifiers
Documents, Tools & Support
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Documents
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Document Type | Document Name |
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| Design Files | |
| Design Files | |
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Technical Papers & Articles | |
| Technical Papers & Articles | |
| Product Catalog | |
| Sales Terms |
Knowledge Center
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Technical ArticlesWolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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Technical ArticlesSiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.
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