(中文) GaN on SiC solutions for C-Band applications

C-Band

SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA0060002F1-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Evaluation Board	Flange
CMPA0060002F1	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Packaged MMIC	Flange
CMPA0060002F-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	23%	28 V	Evaluation Board	Flange
CMPA0060002F	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	23%	28 V	Packaged MMIC	Flange
CGHV1F006S-AMP1	Yes	GaN on SiC	5.85 GHz	7.2 GHz	6 W	>7 dB	52%	40 V	Evaluation Board	Surface Mount
CGHV1F006S	Yes	GaN on SiC	DC	15 GHz	6 W	>7 dB	52%	40 V	Packaged Discrete Transistor	Surface Mount
CGH40006S-AMP1	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Surface Mount
CGH40006P-AMP	Yes	GaN on SiC	2 GHz	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Pill
CGH40006S	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Plastic
CGH40006P	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGHV1J006D-GP4	Yes	GaN on SiC	DC	18 GHz	6 W	17 dB	60%	40 V	Discrete Bare Die	Die
CG2H40010F-AMP	Yes	GaN on SiC	3.5 GHz	3.9 GHz	10 W	>16 dB	65%	28 V	Evaluation Board	Flange
CG2H40010F	Yes	GaN on SiC	DC	6 GHz	10 W	>16 dB	65%	28 V	Packaged Discrete Transistor	Flange
CGH40010F	No	GaN on SiC	DC	6 GHz	10 W	>14 dB	65%	28 V	Packaged Discrete Transistor	Flange
CG2H40010P	Yes	GaN on SiC	DC	6 GHz	10 W	>16 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH40010P	No	GaN on SiC	DC	6 GHz	10 W	>14 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH55015F2-AMP	Yes	GaN on SiC	5.4 GHz	5.9 GHz	10 W	12 dB	60%	28 V	Evaluation Board	Flange
CGHV27015S	Yes	GaN on SiC	DC	6 GHz	15 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CG2H80015D-GP4	Yes	GaN on SiC	DC	8 GHz	15 W	>12 dB	70%	28 V	Discrete Bare Die	Die
CMPA0060025F1-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F1	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CGHV1F025S	Yes	GaN on SiC	DC	15 GHz	25 W	11 dB	51%	40 V	Packaged Discrete Transistor	Surface Mount
CMPA601C025F-AMP	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Evaluation Board	Flange
CG2H40025F-AMP	Yes	GaN on SiC	3.4 GHz	3.8 GHz	25 W	>15 dB	62%	28 V	Evaluation Board	Flange
CMPA601C025F	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Packaged MMIC	Flange
CMPA2560025F	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Packaged MMIC	Flange
CG2H40025F	Yes	GaN on SiC	DC	6 GHz	25 W	>15 dB	62%	28 V	Packaged Discrete Transistor	Flange
CMPA2560025F-AMP	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Evaluation Board	Flange
CMPA0060025F-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CGH40025P	No	GaN on SiC	DC	6 GHz	25 W	>13 dB	62%	28 V	Packaged Discrete Transistor	Pill
CG2H40025P	Yes	GaN on SiC	DC	6 GHz	25 W	>15 dB	64%	28 V	Packaged Discrete Transistor	Pill
CGH40025F	No	GaN on SiC	DC	6 GHz	25 W	>13 dB	62%	28 V	Packaged Discrete Transistor	Flange
CGHV1J025D-GP4	Yes	GaN on SiC	DC	18 GHz	25 W	17 dB	60%	40 V	Discrete Bare Die	Die
CMPA0060025F	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CMPA601C025D	Yes	GaN on SiC	6 GHz	12 GHz	25 W	32 dB	32%	28 V	MMIC Bare Die	Die
CMPA5259025F-AMP	Yes	GaN on SiC	5.2 GHz	5.9 GHz	25 W	34 dB	50%	28 V	Evaluation Board	Flange
CGH55030F2	No	GaN on SiC	DC	6 GHz	25 W	12 dB	60%	28 V	Packaged Discrete Transistor	Flange
CGHV27030S	Yes	GaN on SiC	DC	6 GHz	30 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CGHV40030F	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Flange
CGH55030P1	Yes	GaN on SiC	DC	6 GHz	30 W	10 dB	25%	28 V	Packaged Discrete Transistor	Pill
CGHV40030P	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Pill
CG2H80030D-GP4	Yes	GaN on SiC	DC	8 GHz	30 W	16.5 dB	65%	28 V	Discrete Bare Die	Die
CGH55030F1	Yes	GaN on SiC	DC	6 GHz	30 W	10 dB	25%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA2060035F-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Evaluation Board	Flange
CG2H40035F-AMP	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Evaluation Board	Flange
CG2H40035F	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Packaged MMIC	Flange
CGH40035F	No	GaN on SiC	DC	6 GHz	35 W	>13 dB	60%	28 V	Packaged Discrete Transistor	Flange
CG2H40035P	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Packaged Discrete Transistor	Pill
CMPA2060035D	Yes	GaN on SiC	2 GHz	6 GHz	35 W	29 dB	42%	28 V	MMIC Bare Die	Die
CMPA5259025F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	37 W	32 dB	50%	28 V	Packaged Discrete Transistor	Flange
CMPA5259025S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	40 W	25 dB	54%	28 V	Packaged MMIC	Plastic
CGHV60040D-GP4	Yes	GaN on SiC	DC	6 GHz	40 W		65%	50 V	Discrete Bare Die	Die
CG2H80045D-GP4	Yes	GaN on SiC	DC	8 GHz	45 W	15 dB	65%	28 V	Discrete Bare Die	Die
CMPA5259050F-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CMPA5259050D	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	MMIC Bare Die	Die
CMPA5259050S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	50%	28 V	Packaged MMIC	Surface Mount
CMPA5259050F-AMP	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Evaluation Board	Flange
CMPA5259050F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CG2H80060D-GP4	Yes	GaN on SiC	DC	8 GHz	60 W	>12 dB	70%	28 V	Discrete Bare Die	Die
CGHV59070F-AMP	Yes	GaN on SiC	4.8 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Evaluation Board	Flange
CGHV59070F	Yes	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Packaged Discrete Transistor	Flange
CGHV1J070D-GP4	Yes	GaN on SiC	DC	18 GHz	70 W	17 dB	60%	40 V	Discrete Bare Die	Die
CGHV59070P	Yes	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Packaged Discrete Transistor	Pill
CGHV60075D5-GP4	Yes	GaN on SiC	DC	6 GHz	75 W	>7 dB	65%	50 V	Discrete Bare Die	Die
CMPA5259080S-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	80 W	22 dB	44%	40 V	Packaged MMIC	Surface Mount
CMPA5259080S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	80 W	22 dB	44%	40 V	Packaged MMIC	Surface Mount
CG2H80120D-GP4	Yes	GaN on SiC	DC	8 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
CGHV59350F-AMP	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Evaluation Board	Flange
CGHV59350F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV59350P	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Packaged Discrete Transistor	Pill

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.

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Wolfspeed RF GaN meets 5G demands on PA design

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C-Band

Knowledge Center

Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Simplifying Global Equipment Designs by Utilizing Silicon Carbide