RF
General-Purpose Broadband, 28 V
Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications that require high reliability and efficiency. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 6 W to 240 W (CW) at 28 V and packaged 50-ohm MMIC amplifiers operating at 28 V suitable from DC–18 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.
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General-Purpose Broadband, 28 V
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General-Purpose Broadband, 28 V
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 2 W | 18 dB | 52% | 28 V | Packaged MMIC | Surface Mount | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 2 W | 18 dB | 52% | 28 V | Packaged MMIC | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 30% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | 2 GHz | 6 GHz | 6 W | >11 dB | 65% | 28 V | Evaluation Board | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Packaged Discrete Transistor | Plastic | |||||
Yes | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 8 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 0.5 GHz | 6 GHz | 10 W | 19 dB | 40% | 28 V | Packaged MMIC | Surface Mount | |||||
Yes | GaN on SiC | 0.5 GHz | 6 GHz | 10 W | 19 dB | 40% | 28 V | Packaged MMIC | Surface Mount | |||||
Yes | GaN on SiC | 3.5 GHz | 3.9 GHz | 10 W | >16 dB | 65% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | 3.5 GHz | 3.9 GHz | 10 W | >14 dB | 65% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
No | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 2.3 GHz | 2.7 GHz | 15 W | 14.5 dB | 28% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 15 W | >12 dB | 70% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 15 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 6 GHz | 15 W | 12 dB | 26% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 0.7 GHz | 6 GHz | 25 W | 21 dB | 36% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 6 GHz | 18 GHz | 25 W | 20 dB | 20% | 22 V | Packaged MMIC | Flange | |||||
CMPA601J025F New | Yes | GaN on SiC | 6 GHz | 18 GHz | 25 W | 20 dB | 20% | 22 V | Packaged MMIC | Flange | ||||
CMPA0760020F New | Yes | GaN on SiC | 0.7 GHz | 6 GHz | 25 W | 21 dB | 36% | 28 V | Packaged MMIC | Flange | ||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >13 dB | 62% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >15 dB | 62% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 2.5 GHz | 6 GHz | 25 W | 24 dB | 31% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 6 GHz | 18 GHz | 25 W | 30 dB | 27% | 22 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 2.5 GHz | 6 GHz | 25 W | 24 dB | 31% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 64% | 28 V | Packaged Discrete Transistor | Pill | |||||
No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 32 dB | 32% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 2.5 GHz | 6 GHz | 25 W | 24 dB | 31% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 18 dB | 33% | 28 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 18 dB | 33% | 28 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 30 W | 16.5 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 30 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 30 dB | 30% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | 3.3 GHz | 3.7 GHz | 35 W | >13 dB | 60% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 28 V | Packaged MMIC | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 35 W | >13 dB | 60% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 32 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 2 GHz | 6 GHz | 35 W | 29 dB | 42% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 0.5 GHz | 3 GHz | 35 W | 14 dB | 50% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 1.8 GHz | 4.2 GHz | 45 W | 24 dB | 45% | 28 V | MMIC Bare Die | Flange | |||||
Yes | GaN on SiC | 1.8 GHz | 4.2 GHz | 45 W | 25 dB | 45% | 28 V | MMIC Bare Die | Die | |||||
No | GaN on SiC | 2.3 GHz | 2.7 GHz | 45 W | >12 dB | 55% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 2.3 GHz | 2.7 GHz | 45 W | >14 dB | 55% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | DC | 8 GHz | 45 W | 15 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 8 GHz | 60 W | >12 dB | 70% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 4 GHz | 60 W | 14 dB | 27% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 6 GHz | 60 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 3.3 GHz | 3.6 GHz | 60 W | 12 dB | 25% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 75 W | 29 dB | 57% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 75 W | 28 dB | 61% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 2.7 GHz | 3.5 GHz | 75 W | 29 dB | 57% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 90 W | >14 dB | 55% | 28 V | Evaluation Board | Push-Pull | |||||
Yes | GaN on SiC | DC | 4 GHz | 90 W | >14 dB | 55% | 28 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | GaN on SiC | DC | 8 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 6 GHz | 120 W | >12 dB | 65% | 28 V | Discrete Bare Die | Die | |||||
No | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28 V | Evaluation Board | Flange | |||||
No | GaN on SiC | 1.2 GHz | 1.4 GHz | 120 W | >15 dB | 70% | 28 V | Evaluation Board | Flange | |||||
Discontinued | GaN on SiC | 1.8 GHz | 2.1 GHz | 120 W | 15 dB | 35% | 28 V | Evaluation Board | Flange | |||||
Discontinued | GaN on SiC | 1.8 GHz | 2.3 GHz | 120 W | 15 dB | 35% | 28 V | Packaged Discrete Transistor | Flange | |||||
No | GaN on SiC | DC | 2.5 GHz | 120 W | 21 dB | 35% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 120 W | >7 dB | 30% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 130 W | 20 dB | 70% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | DC | 2.5 GHz | 130 W | 20 dB | 70% | 28 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 2.5 GHz | 130 W | 20 dB | 70% | 28 V | Packaged Discrete Transistor | Pill | |||||
Yes | GaN on SiC | 1.1 GHz | 1.3 GHz | 180 W | >15 dB | 70% | 28 V | Evaluation Board | Push-Pull | |||||
Yes | GaN on SiC | DC | 3 GHz | 180 W | >15 dB | 70% | 28 V | Packaged Discrete Transistor | Push-Pull | |||||
Yes | GaN on SiC | 1.8 GHz | 2.1 GHz | 240 W | 15 dB | 33% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 1.8 GHz | 2.3 GHz | 240 W | 15 dB | 33% | 28 V | Packaged Discrete Transistor | Flange |