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CG2H40120

120-W; RF Power GaN HEMT
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Wolfspeed’s CG2H40120 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40120 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H40120P
Yes
GaN on SiC
DC
2.5 GHz
130 W
20 dB
70%
28 V
Packaged Discrete Transistor
Pill
CG2H40120F-AMP
Yes
GaN on SiC
1.2 GHz
1.4 GHz
130 W
20 dB
70%
28 V
Evaluation Board
Flange
CG2H40120F
Yes
GaN on SiC
DC
2.5 GHz
130 W
20 dB
70%
28 V
Packaged Discrete Transistor
Flange
Features
  • Up to 2.5 GHz Operation
  • 20 dB Small Signal Gain at 1.0 GHz
  • 15 dB Small Signal Gain at 2.0 GHz
  • 130 W Typical PSAT
  • 70% Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Test Instrumentation
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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 Technical Articles

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