Features
- Up to 2.5 GHz Operation
- 20 dB Small Signal Gain at 1.0 GHz
- 15 dB Small Signal Gain at 2.0 GHz
- 130 W Typical PSAT
- 70% Efficiency at PSAT
- 28 V Operation
CG2H40120
120-W; RF Power GaN HEMT
Wolfspeed’s CG2H40120 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40120 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.
Products
CG2H40120
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CG2H40120
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CG2H40120P | Yes | GaN on SiC | DC | 2.5 GHz | 130 W | 20 dB | 70% | 28 V | Packaged Discrete Transistor | Pill | ||||
CG2H40120F-AMP | Yes | GaN on SiC | 1.2 GHz | 1.4 GHz | 130 W | 20 dB | 70% | 28 V | Evaluation Board | Flange | ||||
CG2H40120F | Yes | GaN on SiC | DC | 2.5 GHz | 130 W | 20 dB | 70% | 28 V | Packaged Discrete Transistor | Flange |
Applications
- 2-Way Private Radio
- Broadband Amplifiers
- Test Instrumentation
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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Document Type | Document Name |
|---|---|
| Design Files | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Product Catalog | |
| Sales Terms |
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