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CG2H80045D

CG2H80045D
CG2H80045D
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Wolfspeed’s CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H80045D-GP4
Yes
GaN on SiC
DC
8 GHz
45 W
15 dB
65%
28 V
Discrete Bare Die
Die
Features
  • 45 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 8 GHz Operation
  • High Efficiency
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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