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CGH25120F

CGH25120F

Wolfspeed CGH25120F 120W 2300-2700-MHz GaN HEMT
120-W; 2300 – 2700-MHz; GaN HEMT for WiMAX and LTE

Wolfspeed’s CGH25120F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX; LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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CGH25120F
Yes
GaN on SiC
2.5 GHz
2.7 GHz
120 W
>7 dB
30%
28 V
Packaged Discrete Transistor
Flange
Features
  • 2.3 – 2.7 GHz Operation
  • 13 dB Gain
  • -32 dBc ACLR at 20 W PAVE
  • 30 % Efficiency at 20 W PAVE
  • High Degree of DPD Correction Can be Applied
Applications
  • MC-GSM; WCDMA and LTE Amplifiers
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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Simon Wood – Carl Platis – Don Farrell – Brad Millon – Bill Pribble – Peter Smith – Ray Pengelly – and Jim Milligan – This article discusses various uses of Wolfspeed’s GaN HEMTs (CGH21120 – CGH25120 – CGH40120) in standard and novel amplifier topologies. It includes the practical use of Wolfspeed’s proprietary large signal models.
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Simon Wood – Ray Pengelly – Don Farrell – and Carl Platis – Wolfspeed – and Jim Crescenzi – Central Coast Microwave Design – New GaN HEMT devices allow the design of high power amplifiers with the desired linearity and efficiency for 4G applications such as WiMAX – UMTS and WCDMA.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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