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CGH27030

CGH27030

Wolfspeed CGH27030 30-W 28-V GaN HEMT for Linear Communications
30-W; DC – 6.0-GHz; 28-V; GaN HEMT
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Note: CGH27030F is Not Recommended for New Designs. Refer to CG2H40025F

Wolfspeed’s CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27030 ideal for VHF; Comms; 3G; 4G; LTE; 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is available in screw-down flange; solder-down pill packages; and a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.

Product SKU
Buy Online
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH27030F
No
GaN on SiC
DC
6 GHz
30 W
15 dB
28%
28 V
Packaged Discrete Transistor
Flange
CGH27030P
Yes
GaN on SiC
6 GHz
30 W
15 dB
28%
28 V
Packaged Discrete Transistor
Pill
CGH27030F-AMP
Yes
GaN on SiC
6 GHz
30 W
15 dB
NA
28 V
Evaluation Board
Flange
CGH27030S
Yes
GaN on SiC
DC
6 GHz
30 W
18 dB
33%
28 V
Packaged Discrete Transistor
Surface Mount
CGH27030S-AMP1
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
18 dB
NA
28 V
Evaluation Board
Surface Mount
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH27030F
No
GaN on SiC
DC
6 GHz
30 W
15 dB
28%
28 V
Packaged Discrete Transistor
Flange
CGH27030P
Yes
GaN on SiC
6 GHz
30 W
15 dB
28%
28 V
Packaged Discrete Transistor
Pill
CGH27030F-AMP
Yes
GaN on SiC
6 GHz
30 W
15 dB
NA
28 V
Evaluation Board
Flange
CGH27030S
Yes
GaN on SiC
DC
6 GHz
30 W
18 dB
33%
28 V
Packaged Discrete Transistor
Surface Mount
CGH27030S-AMP1
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
18 dB
NA
28 V
Evaluation Board
Surface Mount
Features
  • VHF – 3.0 GHz Operation
  • 30 W Peak Power Capability
  • > 15 dB Small Signal Gain
  • > 28% Drain Efficiency
Applications
  • VHF; Comms; 3G; 4G; LTE; 2.3-2.9 GHz WiMAX and BWA amplifier applications.
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Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Design Files
S-parameters
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Ray Pengelly – Simon Wood – Jim Crescenzi – This article describes a WiMAX power amplifier – which achieves high performance using the latest device technologies and design techniques.
Technical Papers & Articles
by Marco J. Pelk – W. C. Edmund Neo – John R. Gajadharsing – Raymond S. Pengelly – Leo C. N. de Vreede – A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Design Files
S-parameters
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Ray Pengelly – Simon Wood – Jim Crescenzi – This article describes a WiMAX power amplifier – which achieves high performance using the latest device technologies and design techniques.
Technical Papers & Articles
by Marco J. Pelk – W. C. Edmund Neo – John R. Gajadharsing – Raymond S. Pengelly – Leo C. N. de Vreede – A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
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