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CGH35015

CGH35015

Macro photograph of the Wolfspeed CGH35015P
15-W; 3300 – 3900-MHz; 28-V; GaN HEMT for WiMAX

Wolfspeed’s CGH35015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35015 ideal for 3.3 – 3.9-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.

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CGH35015P
Yes
GaN on SiC
DC
6 GHz
15 W
12 dB
26%
28 V
Packaged Discrete Transistor
Pill
Features
  • 3.3 – 3.9 GHz Operation
  • 15 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 2.0 W PAVE at < 2.0% EVM
  • 26% Efficiency at 2 W Average Power
Applications
  • WiMAX
  • BWA
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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by John W. Palmour – As wide bandgap devices begin to become commercially available – it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption.
Technical Papers & Articles
by U. H. Andre – R. S. Pengelly – A. R. Prejs and S. M. Wood – and E. J. Crescenzi – An article in High Frequency Electronics about the recent advances in the use of Wolfspeed’s GaN HEMTs for WiMAX applications.
Technical Papers & Articles
by Woo Lee – Sang-Ho Kam – and Yoon-Ha Jeong – This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim – Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Technical Papers & Articles
by R. Marante – J. A. García – L. Cabria – T. Aballo – P. M. Cabral – and J. C. Pedro – Two vector nonlinear characterization procedures are presented – aimed at improving available GaN HEMT models for an accurate reproduction of the device behavior operating as a current source and in switched-mode RF PAs.
Technical Papers & Articles
by Abdullah AlMuhaisen – Peter Wright – J. Lees – P. J. Tasker – Steve C. Cripps and J. Benedikt – This paper introduces a novel approach for the realization of wide band (>octave) high-efficiency (>95%) high Power Amplifiers (PAs).
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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