Wolfspeed CMPA0530002S General-Purpose Broadband; 28 V 2W 28V 0.5-3.0 GHz Surface Mount GaN on SiC
2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications
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Wolfspeed’s CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the input. The CMPA0530002S operates on a 28 volt rail while housed in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 28V to as low as 20V VDD; maintaining high gain and efficiency.

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GaN on SiC
0.5 GHz
3 GHz
2 W
18 dB
28 V
Packaged MMIC
Surface Mount
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by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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