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CMPA2735075

Product image of CMPA2735075 and CMPA2735075F1
75 W; 2.7 – 3.5 GHz; GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a flange; screw-down package.

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Frequency Min
Frequency Max
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CMPA2735075D
Yes
GaN on SiC
2.7 GHz
3.5 GHz
75 W
28 dB
61%
28 V
MMIC Bare Die
Die
CMPA2735075F1
Yes
GaN on SiC
2.7 GHz
3.5 GHz
75 W
29 dB
57%
28 V
Packaged MMIC
Flange
CMPA2735075F1-AMP
Yes
GaN on SiC
2.7 GHz
3.5 GHz
75 W
29 dB
57%
28 V
Evaluation Board
Flange
Features
  • 27 dB Small Signal Gain
  • 80 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Civil and Military Pulsed Radar Amplifiers
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Simon M. Wood – Ulf Andre – Bradley J. Millon – and Jim Milligan – This paper presents the design – development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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 Technical Articles

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