Features
- 34 dB Small Signal Gain
- 40 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
CMPA601C025
25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier
Wolfspeed’s CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN on Si; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si; GaAs; and GaN on Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Products
CMPA601C025
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CMPA601C025
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA601C025D | Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 32 dB | 32% | 28 V | MMIC Bare Die | Die | ||||
CMPA601C025F-AMP | Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Evaluation Board | Flange | ||||
CMPA601C025F | Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Packaged MMIC | Flange |
Applications
- Jamming Amplifiers
- Test Equipment Amplifiers
- Broadband Amplifiers
- Radar Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
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| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Design Files | |
| Data Sheets | |
| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center
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