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28V宽带应用场景

Wolfspeed GaN HEMT 器件非常适合要求高可靠性和高效率的超宽带放大器应用。其高功率密度、低干扰和高截止频率 FT 的内在特性,使其支持瞬时带宽放大器的多倍频程。该系列产品包括了出类拔萃的已封装分立式晶体管(工作电压 28 伏,输出功率 6 W 至 240 W [连续波CW])和已封装 50 欧姆 MMIC 放大器(工作电压 28 伏,适合DC-18 GHz 应用)。该产品组合还包括分立式裸芯片和 MMIC 裸芯片,针对混合型放大器和多功能传输/接收模块而设计。

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频率(最小值)
频率(最大值)
峰值输出功率
增益
效率
工作电压
类型
封装类型
CMPA0530002S-AMP1
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
18 dB
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
18 dB
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
30%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2 GHz
6 GHz
6 W
>11 dB
65%
28 V
Evaluation Board
Pill
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
6 GHz
8 W
>12 dB
65%
28 V
Discrete Bare Die
Die
CMPA0560008S
New
Yes
GaN on SiC
0.45 GHz
6 GHz
10 W
19 dB
40%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>16 dB
65%
28 V
Evaluation Board
Flange
No
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>14 dB
65%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Pill
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
2.3 GHz
2.7 GHz
15 W
14.5 dB
28%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
15 W
14.5 dB
28%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
8 GHz
15 W
>12 dB
70%
28 V
Discrete Bare Die
Die
No
GaN on SiC
DC
6 GHz
15 W
14.5 dB
28%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
15 W
>12 dB
65%
28 V
Discrete Bare Die
Die
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Evaluation Board
Flange
No
GaN on SiC
3.4 GHz
3.8 GHz
25 W
>13 dB
62%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
3.4 GHz
3.8 GHz
25 W
>15 dB
62%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
2.5 GHz
6 GHz
25 W
24 dB
31%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
25 W
>15 dB
62%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
6 GHz
18 GHz
25 W
30 dB
27%
22 V
MMIC Bare Die
Die
Yes
GaN on SiC
2.5 GHz
6 GHz
25 W
24 dB
31%
28 V
Evaluation Board
Flange
No
GaN on SiC
DC
6 GHz
25 W
>13 dB
62%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
6 GHz
25 W
>15 dB
64%
28 V
Packaged Discrete Transistor
Pill
No
GaN on SiC
DC
6 GHz
25 W
>13 dB
62%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
2.5 GHz
6 GHz
25 W
24 dB
31%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
18 dB
33%
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
18 dB
33%
28 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
30 W
10 dB
25%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
6 GHz
30 W
15 dB
28%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
30 W
15 dB
28%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
8 GHz
30 W
16.5 dB
65%
28 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
6 GHz
30 W
10 dB
25%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
30 W
15 dB
28%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
30 W
>12 dB
65%
28 V
Discrete Bare Die
Die
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
2 GHz
6 GHz
35 W
30 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
28 V
Evaluation Board
Flange
No
GaN on SiC
3.3 GHz
3.7 GHz
35 W
>13 dB
60%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
28 V
Packaged MMIC
Flange
No
GaN on SiC
DC
6 GHz
35 W
>13 dB
60%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
2 GHz
6 GHz
35 W
27 dB
35%
32 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
35 W
14 dB
64%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
2 GHz
6 GHz
35 W
29 dB
42%
28 V
MMIC Bare Die
Die
No
GaN on SiC
2.3 GHz
2.7 GHz
45 W
>12 dB
55%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
2.3 GHz
2.7 GHz
45 W
>14 dB
55%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
4 GHz
45 W
>14 dB
55%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
4 GHz
45 W
>12 dB
55%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
4 GHz
45 W
>14 dB
55%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
8 GHz
45 W
15 dB
65%
28 V
Discrete Bare Die
Die
No
GaN on SiC
DC
4 GHz
45 W
>12 dB
55%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
8 GHz
60 W
>12 dB
70%
28 V
Discrete Bare Die
Die
No
GaN on SiC
DC
4 GHz
60 W
14 dB
27%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
60 W
>12 dB
65%
28 V
Discrete Bare Die
Die
Yes
GaN on SiC
0.5 GHz
2.5 GHz
90 W
>14 dB
55%
28 V
Evaluation Board
Push-Pull
Yes
GaN on SiC
DC
4 GHz
90 W
>14 dB
55%
28 V
Packaged Discrete Transistor
Push-Pull
Yes
GaN on SiC
DC
8 GHz
120 W
>12 dB
65%
28 V
Discrete Bare Die
Die
No
GaN on SiC
DC
6 GHz
120 W
>12 dB
65%
28 V
Discrete Bare Die
Die
No
GaN on SiC
DC
3 GHz
120 W
>15 dB
70%
28 V
Evaluation Board
Flange
No
GaN on SiC
1.2 GHz
1.4 GHz
120 W
>15 dB
70%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
1.8 GHz
2.1 GHz
120 W
15 dB
35%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
1.8 GHz
2.3 GHz
120 W
15 dB
35%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
2.5 GHz
120 W
21 dB
35%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
3 GHz
120 W
>15 dB
70%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
1.2 GHz
1.4 GHz
130 W
20 dB
70%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
2.5 GHz
130 W
20 dB
70%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
1.1 GHz
1.3 GHz
180 W
>15 dB
70%
28 V
Evaluation Board
Push-Pull
Yes
GaN on SiC
DC
3 GHz
180 W
>15 dB
70%
28 V
Packaged Discrete Transistor
Push-Pull
Yes
GaN on SiC
1.8 GHz
2.1 GHz
240 W
15 dB
33%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
1.8 GHz
2.3 GHz
240 W
15 dB
33%
28 V
Packaged Discrete Transistor
Flange
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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