28V宽带应用场景

28V宽带应用场景

Wolfspeed GaN HEMT 器件非常适合要求高可靠性和高效率的超宽带放大器应用。其高功率密度、低干扰和高截止频率 FT 的内在特性，使其支持瞬时带宽放大器的多倍频程。该系列产品包括了出类拔萃的已封装分立式晶体管（工作电压 28 伏，输出功率 6 W 至 240 W [连续波CW]）和已封装 50 欧姆 MMIC 放大器（工作电压 28 伏，适合DC-18 GHz 应用）。该产品组合还包括分立式裸芯片和 MMIC 裸芯片，针对混合型放大器和多功能传输/接收模块而设计。

SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA0530002S-AMP1	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CMPA0530002S	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CMPA0060002F1-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Evaluation Board	Flange
CMPA0060002F1	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Packaged MMIC	Flange
CMPA0060002F-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	23%	28 V	Evaluation Board	Flange
CMPA0060002F	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	23%	28 V	Packaged MMIC	Flange
CMPA0060002D	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	30%	28 V	MMIC Bare Die	Die
CGH40006S-AMP1	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Surface Mount
CGH40006P-AMP	Yes	GaN on SiC	2 GHz	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Pill
CGH40006S	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Plastic
CGH40006P	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH60008D-GP4	Yes	GaN on SiC	DC	6 GHz	8 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CMPA0560008S New	Yes	GaN on SiC	0.45 GHz	6 GHz	10 W	19 dB	40%	28 V	Packaged MMIC	Surface Mount
CG2H40010F-AMP	Yes	GaN on SiC	3.5 GHz	3.9 GHz	10 W	>16 dB	65%	28 V	Evaluation Board	Flange
CGH40010F-AMP	No	GaN on SiC	3.5 GHz	3.9 GHz	10 W	>14 dB	65%	28 V	Evaluation Board	Flange
CG2H40010F	Yes	GaN on SiC	DC	6 GHz	10 W	>16 dB	65%	28 V	Packaged Discrete Transistor	Flange
CGH40010F	No	GaN on SiC	DC	6 GHz	10 W	>14 dB	65%	28 V	Packaged Discrete Transistor	Flange
CG2H40010P	Yes	GaN on SiC	DC	6 GHz	10 W	>16 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH40010P	No	GaN on SiC	DC	6 GHz	10 W	>14 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH27015F-AMP	Yes	GaN on SiC	2.3 GHz	2.7 GHz	15 W	14.5 dB	28%	28 V	Evaluation Board	Flange
CGH27015P	Yes	GaN on SiC	DC	6 GHz	15 W	14.5 dB	28%	28 V	Packaged Discrete Transistor	Pill
CG2H80015D-GP4	Yes	GaN on SiC	DC	8 GHz	15 W	>12 dB	70%	28 V	Discrete Bare Die	Die
CGH27015F	No	GaN on SiC	DC	6 GHz	15 W	14.5 dB	28%	28 V	Packaged Discrete Transistor	Flange
CGH60015D-GP4	No	GaN on SiC	DC	6 GHz	15 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CMPA601C025F-AMP	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Evaluation Board	Flange
CGH40025F-AMP	No	GaN on SiC	3.4 GHz	3.8 GHz	25 W	>13 dB	62%	28 V	Evaluation Board	Flange
CG2H40025F-AMP	Yes	GaN on SiC	3.4 GHz	3.8 GHz	25 W	>15 dB	62%	28 V	Evaluation Board	Flange
CMPA601C025F	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Packaged MMIC	Flange
CMPA2560025F	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Packaged MMIC	Flange
CG2H40025F	Yes	GaN on SiC	DC	6 GHz	25 W	>15 dB	62%	28 V	Packaged Discrete Transistor	Flange
CMPA601J025D	Yes	GaN on SiC	6 GHz	18 GHz	25 W	30 dB	27%	22 V	MMIC Bare Die	Die
CMPA2560025F-AMP	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Evaluation Board	Flange
CGH40025P	No	GaN on SiC	DC	6 GHz	25 W	>13 dB	62%	28 V	Packaged Discrete Transistor	Pill
CG2H40025P	Yes	GaN on SiC	DC	6 GHz	25 W	>15 dB	64%	28 V	Packaged Discrete Transistor	Pill
CGH40025F	No	GaN on SiC	DC	6 GHz	25 W	>13 dB	62%	28 V	Packaged Discrete Transistor	Flange
CMPA601C025D	Yes	GaN on SiC	6 GHz	12 GHz	25 W	32 dB	32%	28 V	MMIC Bare Die	Die
CMPA2560025D	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	MMIC Bare Die	Die
CGH27030S-AMP1	Yes	GaN on SiC	1.8 GHz	2.2 GHz	30 W	18 dB	33%	28 V	Evaluation Board	Surface Mount
CGH27030S	Yes	GaN on SiC	DC	6 GHz	30 W	18 dB	33%	28 V	Packaged Discrete Transistor	Surface Mount
CGH55030P1	Yes	GaN on SiC	DC	6 GHz	30 W	10 dB	25%	28 V	Packaged Discrete Transistor	Pill
CGH27030F-AMP	Yes	GaN on SiC	DC	6 GHz	30 W	15 dB	28%	28 V	Evaluation Board	Flange
CGH27030P	Yes	GaN on SiC	DC	6 GHz	30 W	15 dB	28%	28 V	Packaged Discrete Transistor	Pill
CG2H80030D-GP4	Yes	GaN on SiC	DC	8 GHz	30 W	16.5 dB	65%	28 V	Discrete Bare Die	Die
CGH55030F1	Yes	GaN on SiC	DC	6 GHz	30 W	10 dB	25%	28 V	Packaged Discrete Transistor	Flange
CGH27030F	No	GaN on SiC	DC	6 GHz	30 W	15 dB	28%	28 V	Packaged Discrete Transistor	Flange
CGH60030D-GP4	No	GaN on SiC	DC	6 GHz	30 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA2060035F-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Evaluation Board	Flange
CGH40035F-AMP	No	GaN on SiC	3.3 GHz	3.7 GHz	35 W	>13 dB	60%	28 V	Evaluation Board	Flange
CG2H40035F-AMP	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Evaluation Board	Flange
CG2H40035F	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Packaged MMIC	Flange
CGH40035F	No	GaN on SiC	DC	6 GHz	35 W	>13 dB	60%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F-AMP1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	32 V	Evaluation Board	Flange
CG2H40035P	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Packaged Discrete Transistor	Pill
CMPA2060035D	Yes	GaN on SiC	2 GHz	6 GHz	35 W	29 dB	42%	28 V	MMIC Bare Die	Die
CGH40045F-AMP	No	GaN on SiC	2.3 GHz	2.7 GHz	45 W	>12 dB	55%	28 V	Evaluation Board	Flange
CG2H40045F-AMP	Yes	GaN on SiC	2.3 GHz	2.7 GHz	45 W	>14 dB	55%	28 V	Evaluation Board	Flange
CG2H40045F	Yes	GaN on SiC	DC	4 GHz	45 W	>14 dB	55%	28 V	Packaged Discrete Transistor	Flange
CGH40045P	No	GaN on SiC	DC	4 GHz	45 W	>12 dB	55%	28 V	Packaged Discrete Transistor	Pill
CG2H40045P	Yes	GaN on SiC	DC	4 GHz	45 W	>14 dB	55%	28 V	Packaged Discrete Transistor	Pill
CG2H80045D-GP4	Yes	GaN on SiC	DC	8 GHz	45 W	15 dB	65%	28 V	Discrete Bare Die	Die
CGH40045F	No	GaN on SiC	DC	4 GHz	45 W	>12 dB	55%	28 V	Packaged Discrete Transistor	Flange
CG2H80060D-GP4	Yes	GaN on SiC	DC	8 GHz	60 W	>12 dB	70%	28 V	Discrete Bare Die	Die
CGH27060F	No	GaN on SiC	DC	4 GHz	60 W	14 dB	27%	28 V	Packaged Discrete Transistor	Flange
CGH60060D-GP4	No	GaN on SiC	DC	6 GHz	60 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGH40090PP-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	90 W	>14 dB	55%	28 V	Evaluation Board	Push-Pull
CGH40090PP	Yes	GaN on SiC	DC	4 GHz	90 W	>14 dB	55%	28 V	Packaged Discrete Transistor	Push-Pull
CG2H80120D-GP4	Yes	GaN on SiC	DC	8 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGH60120D-GP4	No	GaN on SiC	DC	6 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGH40120F	No	GaN on SiC	DC	3 GHz	120 W	>15 dB	70%	28 V	Evaluation Board	Flange
CGH40120F-AMP	No	GaN on SiC	1.2 GHz	1.4 GHz	120 W	>15 dB	70%	28 V	Evaluation Board	Flange
CGH21120F-AMP	Yes	GaN on SiC	1.8 GHz	2.1 GHz	120 W	15 dB	35%	28 V	Evaluation Board	Flange
CGH21120F	Yes	GaN on SiC	1.8 GHz	2.3 GHz	120 W	15 dB	35%	28 V	Packaged Discrete Transistor	Flange
CGH09120F	No	GaN on SiC	DC	2.5 GHz	120 W	21 dB	35%	28 V	Packaged Discrete Transistor	Flange
CGH40120P	Yes	GaN on SiC	DC	3 GHz	120 W	>15 dB	70%	28 V	Packaged Discrete Transistor	Pill
CG2H40120F-AMP	Yes	GaN on SiC	1.2 GHz	1.4 GHz	130 W	20 dB	70%	28 V	Evaluation Board	Flange
CG2H40120F	Yes	GaN on SiC	DC	2.5 GHz	130 W	20 dB	70%	28 V	Packaged Discrete Transistor	Flange
CGH40180PP-AMP	Yes	GaN on SiC	1.1 GHz	1.3 GHz	180 W	>15 dB	70%	28 V	Evaluation Board	Push-Pull
CGH40180PP	Yes	GaN on SiC	DC	3 GHz	180 W	>15 dB	70%	28 V	Packaged Discrete Transistor	Push-Pull
CGH21240F-AMP	Yes	GaN on SiC	1.8 GHz	2.1 GHz	240 W	15 dB	33%	28 V	Evaluation Board	Flange
CGH21240F	Yes	GaN on SiC	1.8 GHz	2.3 GHz	240 W	15 dB	33%	28 V	Packaged Discrete Transistor	Flange

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.

Technical Articles

Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Technical Articles

Power

MOSFETs

Wolfspeed C3M™ 650 V MOSFETs Push Silicon Carbide Advantages in Power Applications

Wolfspeed’s cutting edge Silicon Carbide 650 V MOSFET family opens up new performance levels in a wide range of applications for your power designs.

Infographic

Knowledge Center

Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed C3M™ 650 V MOSFETs Push Silicon Carbide Advantages in Power Applications