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General-Purpose Broadband, 40 V

Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications that benefit from a reduction of heat-sink requirements. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, discrete transistors and discrete bare die (designed for hybrid amplifiers and multi-function transmit/receive modules) from output powers 6 W to 70 W (CW) at 40 V that are suitable for DC–18 GHz applications.
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General-Purpose Broadband, 40 V
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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV1F006S-AMP3
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
52%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
5.85 GHz
7.2 GHz
6 W
>7 dB
52%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
51%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
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