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General-Purpose Broadband, 40 V

Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications that benefit from a reduction of heat-sink requirements. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, discrete transistors and discrete bare die (designed for hybrid amplifiers and multi-function transmit/receive modules) from output powers 6 W to 70 W (CW) at 40 V that are suitable for DC–18 GHz applications.
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General-Purpose Broadband, 40 V
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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV1F006S-AMP3
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
5.85 GHz
7.2 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
5.85 GHz
7.2 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
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