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Technical ArticlesRF
General-Purpose Broadband, 40 V
Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications that benefit from a reduction of heat-sink requirements. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, discrete transistors and discrete bare die (designed for hybrid amplifiers and multi-function transmit/receive modules) from output powers 6 W to 70 W (CW) at 40 V that are suitable for DC–18 GHz applications.
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General-Purpose Broadband, 40 V
General-Purpose Broadband, 40 V
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | 8.5 GHz | 9.6 GHz | 6 W | >7 dB | 52% | 40 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | 5.85 GHz | 7.2 GHz | 6 W | >7 dB | 52% | 40 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 15 GHz | 6 W | >7 dB | 52% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 18 GHz | 6 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 8.9 GHz | 9.6 GHz | 25 W | 11 dB | 51% | 40 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 15 GHz | 25 W | 11 dB | 51% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 18 GHz | 25 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | DC | 18 GHz | 70 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die |
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Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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