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40V宽带应用场景

Wolfspeed GaN HEMT 器件减少了对于散热器的要求,非常适合超宽带放大器应用。其高功率密度、低干扰和高截止频率 FT 的内在特性,使其支持瞬时带宽放大器的多倍频程。该系列产品包括已封装分立式晶体管和分立式裸芯片(针对混合型放大器和多功能传输/接收模块而设计),其工作电压为 40 伏,输出功率为 6 W 至 70 W(连续波CW),适合DC-18 GHz 应用。

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频率(最小值)
频率(最大值)
峰值输出功率
增益
效率
工作电压
类型
封装类型
CGHV1F006S-AMP3
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
52%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
5.85 GHz
7.2 GHz
6 W
>7 dB
52%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
51%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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