SpeedVal Kit™ Modular Evaluation Platform Videos
Watch videos highlighting SpeedVal Kit, the industry’s first SiC Modular Evaluation Platform. Unbox the system, learn how to quickly and easily swap components and run common tests, and more.
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40V宽带应用场景
Wolfspeed GaN HEMT 器件减少了对于散热器的要求，非常适合超宽带放大器应用。其高功率密度、低干扰和高截止频率 FT 的内在特性，使其支持瞬时带宽放大器的多倍频程。该系列产品包括已封装分立式晶体管和分立式裸芯片（针对混合型放大器和多功能传输/接收模块而设计），其工作电压为 40 伏，输出功率为 6 W 至 70 W（连续波CW），适合DC-18 GHz 应用。
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产品SKU | 在线购买 | 索取样品 | 数据手册 | CAD模型 | 新设计推荐？ | 技术 | 频率（最小值） | 频率（最大值） | 峰值输出功率 | 增益 | 效率 | 工作电压 | 类型 | 封装类型 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV1F006S-AMP3 | Yes | GaN on SiC | 8.5 GHz | 9.6 GHz | 6 W | >7 dB | 52% | 40 V | Evaluation Board | Surface Mount | ||||
CGHV1F006S-AMP1 | Yes | GaN on SiC | 5.85 GHz | 7.2 GHz | 6 W | >7 dB | 52% | 40 V | Evaluation Board | Surface Mount | ||||
CGHV1F006S | Yes | GaN on SiC | DC | 15 GHz | 6 W | >7 dB | 52% | 40 V | Packaged Discrete Transistor | Surface Mount | ||||
CGHV1J006D-GP4 | Yes | GaN on SiC | DC | 18 GHz | 6 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | ||||
CGHV1F025S-AMP1 | Yes | GaN on SiC | 8.9 GHz | 9.6 GHz | 25 W | 11 dB | 51% | 40 V | Evaluation Board | Surface Mount | ||||
CGHV1F025S | Yes | GaN on SiC | DC | 15 GHz | 25 W | 11 dB | 51% | 40 V | Packaged Discrete Transistor | Surface Mount | ||||
CGHV1J025D-GP4 | Yes | GaN on SiC | DC | 18 GHz | 25 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | ||||
CGHV1J070D-GP4 | Yes | GaN on SiC | DC | 18 GHz | 70 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die |
Knowledge Center
Silicon Carbide TOLL MOSFETs Enable High Efficiency and High Power Density In The Most Demanding Power Supply Applications
Wolfspeed’s Silicon Carbide TOLL MOSFETs enable lower conduction and switching losses, increase efficiency, and high-frequency operation helps reduce the size of passive components. In this webinar, learn how these devices are optimized for high-performance applications.